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MPSA29_D27Z +BOM

Bipolar (BJT) Transistor NPN - Darlington 100 V 800 mA 125MHz 625 mW Through Hole TO-92-3

MPSA29_D27Z General Description

Bipolar (BJT) Transistor NPN - Darlington 100 V 800 mA 125MHz 625 mW Through Hole TO-92-3

Specifications

Series - Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 800 mA Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V Power - Max 625 mW
Frequency - Transition 125MHz Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Base Product Number MPSA29

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