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In Stock: 6,333
Product MMIX1X200N60B3H1 is an advanced Trans IGBT Chip engineered for efficient N-channel operation at 600 volts
MMIX1X200N60B3H1
SMDP-21
Active
Product Category: | IGBT Transistors | Technology: | Si |
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Mounting Style: | SMD/SMT | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 600 V | Collector-Emitter Saturation Voltage: | 1.7 V |
Maximum Gate Emitter Voltage: | - 20 V, + 20 V | Continuous Collector Current at 25 C: | 175 A |
Pd - Power Dissipation: | 520 W | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Packaging: | Tube |
Gate-Emitter Leakage Current: | 200 nA | Product Type: | IGBT Transistors |
Factory Pack Quantity: | 20 | Subcategory: | IGBTs |
Unit Weight: | 0.282192 oz | Package/Case | SMDP-21 |
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