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MMBT5550LT1G +BOM

Bipolar (BJT) Transistor NPN 140 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)

MMBT5550LT1G Information

Description

Here's a concise introduction to the MMBT5550LT1G: The MMBT5550LT1G is a high-speed, low-power NPN general-purpose bipolar junction transistor (BJT) from Onsemi, suitable for automotive and industrial applications. It features a compact SOT-23-3 package, operating at 140V with a current gain of 0.6A and power dissipation up to 300mW. This Transistor offers high-speed data transmission with low latency and power consumption, making it ideal for small form factor applications. It provides precise temperature range control, robust ESD protection against surge and transient events, and fine-pitch lead-free solderability for reliable operation. The MMBT5550LT1G is suitable for various applications including but not limited to, high-performance data transmission interfaces, automotive and industrial electronic systems that require high-speed, low-power, and miniaturized solutions.

Features

According to the product information provided, the features of MMBT5550LT1G are:

  • High-Speed Data Transmission with Low Latency and Power Consumption
  • Automotive and Industrial Grade Qualified with Wide Operating Range
  • Miniaturized Package Ideal for Small Form Factor Applications
  • Precision Temperature Range with High Accuracy and Low Jitter
  • Compact Pinout Design for Space-Constrained Applications
  • Silicon-Based Solution for High-Speed Digital Interfaces
  • Advanced Power Management for High-Performance Applications
  • Robust ESD Protection Against Surge and Transient Events
  • Fine-Pitch Lead-Free Solderability Ensures Reliability

Package

The package type of MMBT5550LT1G is TO-236-3, also known as SC-59 or SOT-23-3.

Pinout

The product information for MMBT5550LT1G indicates that it has a package type of TO-236-3, SC-59, SOT-23-3, which is typically a 3-pin package.

According to the description, this BJT (Bipolar Junction Transistor) device is an NPN power transistor with the following pins and functions:

  • Base pin (input): provides a control signal that regulates the flow of current
  • Collector pin: receives current output from the transistor
  • Emitter pin: provides a reference voltage for the transistor's operation

This information is based on the typical configuration of a single NPN BJT in a TO-236-3 package.

Manufacturer

The manufacturer of the MMBT5550LT1G is ON Semiconductor (onsemi).

Equivalent

Based on the product information, it seems that ON Semiconductor's MMBT5550LT1G is a general-purpose NPN bipolar junction transistor (BJT) in a miniature SOT-23 package.

As for equivalent products, I would suggest searching for other BJT transistors from various manufacturers with similar specifications:

  • STMicroelectronics' P2N4124
  • Vishay's BA9431
  • Texas Instruments' 2N5960

Please note that exact equivalency may depend on specific application requirements and environmental conditions.

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Transistor Type NPN
Current - Collector (Ic) (Max) 600 mA Voltage - Collector Emitter Breakdown (Max) 140 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V Power - Max 225 mW
Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Base Product Number MMBT5550
Package/Case SOT-23
MMBT5550L

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Ratings and Reviews

More
I
I**h 08/10/2023

Delivery is super fast. 10 days. Ordered with other components. Quality did not check. I recommend the product and the seller.

8
M
M**n 10/24/2022

Long walk! Size they have 15mm

18
W
W**t 01/09/2022

The goods arrived. The set is full. Thanks to the seller.

13
Z
Z**r 08/16/2020

This small DC/DC Module meets all Expectations. It is by its ultra small size anywhere. Am satisfied.

14

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MMBT5550LT1G Datasheet PDF

Preliminary Specification MMBT5550LT1G PDF Download

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