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NPN RF Transistor
MMBT5179
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Here's a concise introduction to the MMBT5179: The MMBT5179 is a high-frequency NPN transistor from Texas Instruments, packaged in a small, compact SOT-23 format. It features a low-power dissipation, high current gain, and low saturation voltage, making it suitable for various applications that require high-frequency switching and amplification. This transistor is designed to operate at 12V with a maximum collector current of 0.05A. The MMBT5179 is optimized for use in RF amplifiers, signal amplifiers, mixers, oscillators, digital logic circuits, and other switching and pulse applications that require low power consumption. Its complementary NPN counterpart, the MMBT5178, is also available for applications that benefit from a matched pair of transistors. Overall, the MMBT5179 offers a reliable, compact solution for designers looking to simplify their designs while maintaining high performance.
The MMBT5179 features:
These features make it suitable for various applications such as RF amplifiers, signal amplifiers, mixers, oscillators, digital logic circuits, switching circuits, pulse circuits, and power management circuits.
The package type of MMBT5179 is SOT-23-3, a small outline transistor (SOT) package with three pins.
The manufacturer of the MMBT5179 is Texas Instruments, a multinational semiconductor company that designs, manufactures, and sells semiconductors and other electronic components.
The MMBT5179 is a PNP bipolar transistor suitable for high-frequency switching applications, such as RF amplifiers, signal amplifiers, mixers, oscillators, digital logic circuits, switching circuits, pulse circuits, power management circuits, and motor control circuits. Its low power dissipation, high current gain, and low saturation voltage make it an ideal component for a wide range of applications.
The equivalent products of MMBT5179 are:
Please note that these equivalents may have slightly different specifications or packaging.
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors | Transistor Type | NPN |
---|---|---|---|
Voltage - Collector Emitter Breakdown (Max) | 12V | Frequency - Transition | 2GHz |
Noise Figure (dB Typ @ f) | 5dB @ 200MHz | Gain | 15dB |
Power - Max | 225mW | DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA, 1V |
Current - Collector (Ic) (Max) | 50mA | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | MMBT5179 |
Product Category | RF Bipolar Transistors | Technology | Si |
Transistor Polarity | NPN | Operating Frequency | 2000 MHz |
DC Collector/Base Gain hfe Min | 25 | Collector- Emitter Voltage VCEO Max | 12 V |
Emitter- Base Voltage VEBO | 2.5 V | Continuous Collector Current | 50 mA |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Configuration | Single | Mounting Style | SMD/SMT |
Collector- Base Voltage VCBO | 20 V | DC Current Gain hFE Max | 250 |
Gain Bandwidth Product fT | 2000 MHz | Height | 0.93 mm |
Length | 2.92 mm | Maximum DC Collector Current | 50 mA |
Pd - Power Dissipation | 225 mW | Product Type | RF Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Type | RF Bipolar Small Signal | Width | 1.3 mm |
Part # Aliases | MMBT5179_NL | Unit Weight | 0.000282 oz |
Package/Case | SOT-23 |
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11/01/2023
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09/30/2023
The speakers came, but on one wire there was damage at the base of the speaker, but this is fixable, i solder a new wire
07/09/2021
Thanks Tom for the parts.good price
06/25/2021
Quickly after checking, i will write off. Thank you dear chinese...
Preliminary Specification MMBT5179 PDF
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