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See Technical Specifications

MMBT5179 +BOM

NPN RF Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

MMBT5179
Datasheet:

MMBT5179 Datasheet (PDF)
Transistor Type:

NPN
Voltage - Collector Emitter Breakdown (Max):

12V
Frequency - Transition:

2GHz
Noise Figure (dB Typ @ F):

5dB @ 200MHz
EDA/CAD Models:

Request Free CAD Models for MMBT5179

Description

Here's a concise introduction to the MMBT5179: The MMBT5179 is a high-frequency NPN transistor from Texas Instruments, packaged in a small, compact SOT-23 format. It features a low-power dissipation, high current gain, and low saturation voltage, making it suitable for various applications that require high-frequency switching and amplification. This transistor is designed to operate at 12V with a maximum collector current of 0.05A. The MMBT5179 is optimized for use in RF amplifiers, signal amplifiers, mixers, oscillators, digital logic circuits, and other switching and pulse applications that require low power consumption. Its complementary NPN counterpart, the MMBT5178, is also available for applications that benefit from a matched pair of transistors. Overall, the MMBT5179 offers a reliable, compact solution for designers looking to simplify their designs while maintaining high performance.

Features

The MMBT5179 features:

PNP bipolar transistor
Low power dissipation
High current gain
Low saturation voltage
Complementary NPN type available as MMBT5178
High-frequency switching applications

These features make it suitable for various applications such as RF amplifiers, signal amplifiers, mixers, oscillators, digital logic circuits, switching circuits, pulse circuits, and power management circuits.

Package

The package type of MMBT5179 is SOT-23-3, a small outline transistor (SOT) package with three pins.

Manufacturer

The manufacturer of the MMBT5179 is Texas Instruments, a multinational semiconductor company that designs, manufactures, and sells semiconductors and other electronic components.

Applications

The MMBT5179 is a PNP bipolar transistor suitable for high-frequency switching applications, such as RF amplifiers, signal amplifiers, mixers, oscillators, digital logic circuits, switching circuits, pulse circuits, power management circuits, and motor control circuits. Its low power dissipation, high current gain, and low saturation voltage make it an ideal component for a wide range of applications.

Equivalent

The equivalent products of MMBT5179 are:

NXP Semiconductors - BC817-16
ON Semiconductor - NPNP3001
STMicroelectronics - BS250
Vishay Intertechnology - VTR5120

Please note that these equivalents may have slightly different specifications or packaging.

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors	Series	-
Transistor Type	NPN	Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	2GHz	Noise Figure (dB Typ @ f)	5dB @ 200MHz
Gain	15dB	Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 3mA, 1V	Current - Collector (Ic) (Max)	50mA
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	MMBT5179	Product Category	RF Bipolar Transistors
Technology	Si	Transistor Polarity	NPN
Operating Frequency	2000 MHz	DC Collector/Base Gain hfe Min	25
Collector- Emitter Voltage VCEO Max	12 V	Emitter- Base Voltage VEBO	2.5 V
Continuous Collector Current	50 mA	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Configuration	Single
Mounting Style	SMD/SMT	Collector- Base Voltage VCBO	20 V
DC Current Gain hFE Max	250	Gain Bandwidth Product fT	2000 MHz
Height	0.93 mm	Length	2.92 mm
Maximum DC Collector Current	50 mA	Pd - Power Dissipation	225 mW
Product Type	RF Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Type	RF Bipolar Small Signal
Width	1.3 mm	Part # Aliases	MMBT5179_NL
Unit Weight	0.000282 oz	Package/Case	SOT-23