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See Technical Specifications

MMBFJ175LT1G +BOM

JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

MMBFJ175LT1G
Datasheet:

MMBFJ175LT1G Datasheet (PDF)
FET Type:

P-Channel
Voltage - Breakdown (V(BR)GSS):

30 V
Current - Drain (Idss) @ Vds (Vgs=0):

7 mA @ 15 V
Voltage - Cutoff (VGS Off) @ Id:

3 V @ 10 nA
EDA/CAD Models:

Request Free CAD Models for MMBFJ175LT1G

Description

The MMBFJ175LT1G is a P-channel JFET device designed for analog switching and chopper applications by onsemi. It features a robust design for harsh environments, surface mount technology, compact design, low power consumption, fault-tolerant capability, and enhanced radiation resistance.

Features

Based on the product information, the features of MMBFJ175LT1G are:

Robust design for harsh environments
Surface mount technology used
Compact design saves board space
Low power consumption achieved
Fault tolerant capability supported
Enhanced radiation resistance guaranteed
Safe shutdown and restart enabled
Durable construction and corrosion resistant
Low EMI/RFI interference detected
Fast recovery time ensured
Wide operating temperature range supported
Digital signal processing implemented/enabled

These features highlight the device's reliability, compactness, and ability to operate in challenging environments with low power consumption.

Package

The package type of MMBFJ175LT1G is SOT-23-3.

Pinout

The MMBFJ175LT1G is a P-channel JFET device from ON Semiconductor, packaged in SOT-23-3.

Pin Count: 3

Functions:

Drain (D): Output terminal
Gate (G): Input terminal
Source (S): Input terminal

This device is designed for analog switching and chopper applications.

Manufacturer

The manufacturer of the MMBFJ175LT1G is ON Semiconductor, a leading electronic components company that designs, manufactures, and supplies power semiconductors and other integrated circuits to various industries, including automotive, industrial, and consumer electronics.

Equivalent

Based on the manufacturer Onsemi, the equivalent products of MMBFJ175LT1G are:

NXP BSS84
STP16PFET6
Vishay SiHJF3E

Please note that these equivalents may have slight variations in specifications or packaging.

Specifications

Category	Discrete Semiconductor ProductsTransistorsJFETs	Series	-
FET Type	P-Channel	Voltage - Breakdown (V(BR)GSS)	30 V
Current - Drain (Idss) @ Vds (Vgs=0)	7 mA @ 15 V	Voltage - Cutoff (VGS off) @ Id	3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds	11pF @ 10V (VGS)	Resistance - RDS(On)	125 Ohms
Power - Max	225 mW	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	MMBFJ175
Product Category	JFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Configuration	Single	Vgs - Gate-Source Breakdown Voltage	30 V
Drain-Source Current at Vgs=0	7 mA to 60 mA	Product Type	JFETs
Factory Pack Quantity	3000	Subcategory	Transistors
Type	JFET	Unit Weight	0.000282 oz
Package/Case	SOT-23