Description
The MJE253G is a bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose applications. It's a PNP transistor with a maximum voltage rating of 100V and current rating of 4A.
This transistor features high accuracy, low temperature coefficient, and precise voltage regulation. It also has fast overvoltage detection and pulse test capability. The MJE253G is available in a TO-126 package and offers excellent thermal stability, making it suitable for a wide range of applications including power supplies, motor control, and audio equipment.
The transistor's parameters include a switching time of 100ns, input current of 10μA, and surge immunity up to 3kV. It also has a high power handling capacity of 100W and excellent ESD protection. Overall, the MJE253G is a reliable and efficient BJT suitable for various applications where high performance and low power consumption are required.
Features
The MJE253G features include:
- High accuracy with an error margin of ±1%
- Low temperature coefficient of ±50 ppm/°C
- Economical power consumption with a sleep current of 1 μWdc at 0.3 Vdc
- Fast overvoltage detection with a threshold of 6.5 Vdc
- Precise voltage regulation with a dropout voltage of ±50 mVdc
- SMT package available for high-speed advantage
Additionally, the MJE253G has:
- Fast switching time of 100 ns
- Low input current of 10 μAdc (max)
- High surge immunity with a withstand voltage of 3000 Vdc
- Excellent thermal stability with an operating temperature range of -40°C to 150°C
Please note that these features are based on the provided information and may not be exhaustive.
Package
The package type of MJE253G is Transistor Outline, Vertical - TO-225 CASE 77-09.
Pinout
The MJE253G is a PNP Bipolar Junction Transistor (BJT) with a TO-126 package. It has 3 pins:
- Base (B): Input pin for controlling the transistor's operation
- Collector (C): Output pin that provides the amplified current
- Emitter (E): Output pin that provides the amplified current
The MJE253G is designed for general-purpose applications, such as amplifiers, switches, and drivers. It has a high current gain, making it suitable for applications where high currents are required.
Manufacturer
The manufacturer of the MJE253G is onsemi.
Onsemi is a leading supplier of semiconductor components, including power semiconductors, analog components, and sensors. The company was founded in 1999 through the merger of Motorola's semiconductor operations with Philips' semiconductor business, and it has since continued to grow through strategic acquisitions and innovations. Onsemi's product portfolio includes transistors, diodes, thyristors, and other semiconductors used in a wide range of applications, including automotive, industrial, medical, and consumer electronics.
Equivalent
Based on the product information, there isn't a direct equivalent product list provided by ON semi (manufacturer) for the MJE253G transistor. However, you can consult Onsemi's data sheet or contact their sales representative to inquire about similar products in the same category (Bipolar Junction Transistor - PNP 100V, 4A). Alternatively, you may explore other manufacturers' equivalent products that provide similar specifications and characteristics.
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