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8.0 A, 100 V PNP Darlington Bipolar Power Transistor
TO-252-3Manufacturer:
Mfr.Part #:
MJD127G
Datasheet:
Series: MJD127
Case Outline:
369C
MSL Temp (°C):
260
Container Type:
REEL
EDA/CAD Models:
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The MJD127G is a PNP Darlington transistor from Onsemi, designed for surface-mount applications in plastic sleeves or other configurations. It features monolithic construction with built-in base-emitter shunt resistors, ensuring high DC current gain (hFE = 2500) and simplifying designs. This transistor allows for improved performance and space efficiency. The MJD127G has a voltage rating of 100V and a current rating of 8A, making it suitable for various applications such as automotive systems, industrial control, and power management schemes. It is also lead-form adaptable, allowing for versatility in design and implementation. Overall, the MJD127G offers reliable performance and reliability, backed by Onsemi's reputation for quality and compliance with industry standards (AEC-Q101 qualified and PPAP capable).
According to the product information, the features of MJD127G are:
The package type of MJD127G is TO-252-2, also known as DPAK.
The MJD127G is a PNP Darlington transistor with a TO-252-2 (DPAK) package. The pin count for this component is typically 3 pins: Collector, Base, and Emitter.
Here's a brief summary of the functions:
As a Darlington transistor, the MJD127G has a high current gain and is suitable for applications that require amplification of low-level signals.
The manufacturer of the MJD127G is ON Semiconductor (formerly known as Motorola Semiconductor).
The equivalent products of MJD127G are:
These products have similar specifications and characteristics to the MJD127G, including a Darlington configuration, high current gain, and a power rating of 20W.
Status | Active | Case Outline | 369C |
MSL Temp (°C) | 260 | Container Type | REEL |
Package/Case | TO-252-3 |
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