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MJ11015G +BOM

30 A, 120 V PNP Darlington Bipolar Power Transistor

MJ11015G Information

Description

Here's a concise introduction to the MJ11015G: The MJ11015G is a high-performance Darlington PNP transistor from ON Semiconductor, designed for general-purpose applications. With a high DC current gain of 1000 (min) at an input current of 20 A dc, this device excels in amplification and switching tasks. Its monolithic construction features a built-in base-emitter shunt resistor, which enhances stability and reliability. The MJ11015G operates within a junction temperature range of -55°C to +200°C, making it suitable for use in various industrial, automotive, and consumer applications. The TO-3-3 package provides a compact and reliable form factor. Overall, the MJ11015G is an excellent choice for designers seeking a robust and efficient transistor solution.

Features

According to the provided information, the features of MJ11015G are:

  • High DC Current Gain - hFE = 1000 (Min) @ IC = 20 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistor
  • Junction Temperature to +200°C

Package

The package type of MJ11015G is TO-3-3.

Pinout

According to the information, the product name is MJ11015G, manufactured by onsemi. The package type is TO-3-3, which has a 3-Pin (2+Tab) configuration.

Manufacturer

The manufacturer of the MJ11015G is ON Semiconductor (previously known as ON-Semiconductor Corporation), also referred to as onsemi. It's a leading independent supplier of advanced semiconductor components, primarily focusing on designing, producing, and delivering electronic solutions for various markets.

Equivalent

Based on the product information, the equivalent products of MJ11015G are likely to be other Darlington PNP transistors with similar specifications. Some possible alternatives could be:

  • NPNP2007 (STMicroelectronics)
  • BD241 (Standex Electronics)
  • 2N6045 (Fairchild Semiconductor)

Please note that these are just potential equivalents and may not have identical specifications or performance characteristics as the MJ11015G.

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 30 A Voltage - Collector Emitter Breakdown (Max) 120 V
Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V Power - Max 200 W
Frequency - Transition 4MHz Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole Base Product Number MJ11015
Package/Case TO-3

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Ratings and Reviews

More
P
P**y 01/03/2024

Received quickly-thank you. Check everything is not yet possible-i do not think that there will be problems if something i will add a tip. Thank you.

17
S
S**h 12/28/2023

Finally received!! 1.5 month. But it's here! .. Good product and nice packed! Tested and work good!!

13
A
A**n 12/23/2022

Replaced in his electric bike 7575 for bought 3077. It became better to disperse, almost like a ferrari. and also began to work protection over current. it is necessary to increase the tire, and it became constantly pierced the wheel. i recommend buying these 3077.

4
K
K**g 01/25/2022

Great company to do business with....George makes it happen!

12

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MJ11015G Datasheet PDF

Preliminary Specification MJ11015G PDF Download

MJ11015G PDF Preview

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