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MBR1H100SFT3G +BOM

2-Pin Schottky Diode, 100V, 1A

MBR1H100SFT3G Information

Description

The MBR1H100SFT3G, a Schottky diode from Onsemi! Let me give you the brief introduction: The MBR1H100SFT3G is a unidirectional, surge-absorbing diode designed for applications where high-speed switching and low forward voltage drop are essential. It features a guard ring structure for stress protection, allowing it to operate efficiently in harsh environments. This diode suits various applications, including telecommunication systems, renewable energy sources, electric vehicle chargers, industrial power supplies, and more. Its 100V rating and 1A current handling make it suitable for high-power conversion, transient voltage suppression, and switched-mode power supplies. In automotive applications, its NRVB prefix ensures a reliable performance in unique site and control change requirements. This diode meets MSL1 requirements, AEC-Q101 qualifications, and is PPAP capable for demanding environmental conditions. Overall, the MBR1H100SFT3G offers low forward voltage drop, high-speed switching, and robust package features that can be trusted for reliable operation in a wide range of applications.

Features

According to the product information, the features of the MBR1H100SFT3G diode are:

  • Guardring for Stress Protection
  • Low Forward Voltage
  • Operating Junction Temperature up to 175°C
  • Meets UL94 V-0 epoxy standards
  • Package designed for optimal automated board assembly
  • ESD Ratings: Machine Model = C, Human Body Model = 3B

Additionally, the diode is Pb-Free, has a 100% Matte Sn (Tin) lead finish, and meets MSL 1 requirements. It's also AEC-Q101 qualified and PPAP capable, indicating compliance with automotive industry standards.

Package

The package type of MBR1H100SFT3G is SOD123.

Pinout

The MBR1H100SFT3G is a Schottky diode with a 2-pin package (SOD-123FL). The pins are:

  • Anode: Pin 1
  • Cathode: Pin 2

This diode is designed for high-reliability applications and features guardring for stress protection. It has a low forward voltage drop, making it suitable for use in power supplies, motor drives, and other applications where efficient energy conversion is important.

Manufacturer

The manufacturer of the MBR1H100SFT3G is Onsemi (formerly NXP Semiconductors, previously Motorola).

Applications

According to the product information, the application areas of the MBR1H100SFT3G Schottky Diode are:

  • Telecommunication Systems
  • Renewable Energy Sources
  • Electric Vehicle Chargers
  • High Current Applications
  • Industrial Power Supplies
  • Auxiliary Power Systems
  • Regulated Voltage Output
  • Efficient Power Conversion
  • High Voltage Rectifiers
  • Energy Saving Solutions

These applications take advantage of the diode's features, such as low forward voltage, stress protection, and operating junction temperature.

MBR1H100SFT3G

Specifications

Status Active Case Outline 498-01
MSL Temp (°C) 260 Container Type REEL
Technology Schottky Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 760 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr 40 µA @ 100 V
Mounting Type Surface Mount Operating Temperature - Junction -65°C ~ 175°C
Base Product Number MBR1H100 Package/Case SOD123

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Ratings and Reviews

More
A
A**n 12/12/2023

Atrodo beget, pabandysiu parašysiu

9
S
S**a 12/09/2023

Works very well. A must for any DIY!

6
C
C**b 06/22/2023

A good module for organizing usb charging in the car. You can also adapt for other needs.

14

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MBR1H100SFT3G Datasheet PDF

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