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LND150N3-G-P014 +BOM

High voltage tolerance and low drain current make LND150N3-G-P014 ideal for demanding designs

Manufacturer:

Microchip Technology
Mfr.Part #:

LND150N3-G-P014
Datasheet:

LND150N3-G-P014 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for LND150N3-G-P014

LND150N3-G-P014 Information

General Description

The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected.The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
ESD gate protection

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	30 mA	Rds On - Drain-Source Resistance	1 kOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	740 mW
Channel Mode	Depletion	Configuration	Single
Fall Time	1300 ns	Height	5.33 mm
Length	5.21 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	450 ns
Factory Pack Quantity	2000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	100 ns
Typical Turn-On Delay Time	90 ns	Width	4.19 mm
Unit Weight	0.016000 oz	Package/Case	TO-92-3