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Compact and reliable gate driver for industrial automation

LM5108DRCR General Description

The LM5108DRCR is a highly efficient and versatile high frequency half-bridge gate driver designed for controlling N-channel MOSFETs in various half-bridge configuration based topologies. Its maximum switch node voltage rating of 100 V makes it suitable for a wide range of applications including synchronous buck, full bridge, active clamp forward, LLC, and synchronous boost. The interlock functionality ensures that both outputs cannot be high at the same time, improving system robustness in motor drive and power tools applications. Additionally, the enable and disable functionality provides flexible and fast control of the power stage, with the added benefit of reducing standby current and responding to system faults in battery powered tools


Key Features

  • Drives two N-channel MOSFETs in high-side low-side configuration
  • Available in 3-mm x 3-mm package
  • Interlock or cross-conduction protection
  • Enable/disable functionality
  • Absolute maximum negative voltage handling on HS (–7 V)
  • 5-V typical under voltage lockout
  • 20-ns typical propagation delay
  • 11-ns rise, 8-ns typical fall time with 1000-pF load
  • 1-ns typical delay matching
  • 2.6-A sink, 1.6-A source output currents
  • Absolute maximum boot voltage 110 V
  • Low current (7-µA) consumption when disabled
  • Integrated bootstrap diode


  • Top choice for automotive systems
  • Essential for industrial equipment
  • Perfect for telecommunications gear


Bus voltage (max) (V) 110 Power switch MOSFET
Input VCC (min) (V) 6 Input VCC (max) (V) 16
Peak output current (A) 2.6 Operating temperature range (°C) -40 to 125
Undervoltage lockout (typ) (V) 5 Rating Catalog
Propagation delay time (µs) 0.02 Rise time (ns) 11
Fall time (ns) 8 Iq (mA) 0.00028
Input threshold TTL Channel input logic TTL
Negative voltage handling at HS pin (V) -5 Features Enable, Interlock
Driver configuration Dual inputs

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