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LM5102MM/NOPB +BOM

High Voltage Half-Bridge Gate Driver with Programmable Delay

Manufacturer:

Texas Instruments
Mfr.Part #:

LM5102MM/NOPB
Datasheet:

LM5102MM/NOPB Datasheet (PDF)
Bus Voltage (max) (V):

100
Power Switch:

MOSFET
Input VCC (min) (V):

9
Input VCC (max) (V):

14
EDA/CAD Models:

Request Free CAD Models for LM5102MM/NOPB

LM5102MM/NOPB Information

General Description

When it comes to driving N-Channel MOSFETs in synchronous buck or half bridge configurations, the LM5102MM/NOPB stands out as a high-voltage gate driver that delivers exceptional performance and versatility. Its ability to work with supply voltages up to 100V, independently controlled outputs, and integrated high voltage diode for charging the bootstrap capacitor make it a reliable choice for demanding applications. Moreover, its robust level shifter, low power consumption, and undervoltage lockout features ensure efficient and safe operation

Key Features

Drives Both a High-Side and Low-Side N-Channel MOSFET
Independently Programmable High and Low Side Rising Edge Delay
Bootstrap Supply Voltage Range up to 118 V dc
Fast Turn-Off Propagation Delay (25 ns Typical)
Drives 1000-pF Loads with 15-ns Rise and Fall Times
Supply Rail Undervoltage Lockout
Low Power Consumption
Timer Can Be Terminated Midway Through Sequence

Specifications

Bus voltage (max) (V)	100	Power switch	MOSFET
Input VCC (min) (V)	9	Input VCC (max) (V)	14
Peak output current (A)	2	Operating temperature range (°C)	-40 to 125
Undervoltage lockout (typ) (V)	8	Rating	Catalog
Propagation delay time (µs)	0.035	Rise time (ns)	10
Fall time (ns)	10	Iq (mA)	0.01
Input threshold	TTL	Channel input logic	TTL
Negative voltage handling at HS pin (V)	-1	Driver configuration	Dual, Independent
Package/Case	VSSOP-10