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See Technical Specifications

JANTXV2N2907AUB +BOM

Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB Waffle

Manufacturer:

MICROCHIP
Mfr.Part #:

JANTXV2N2907AUB
Datasheet:

JANTXV2N2907AUB Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Transferred
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for JANTXV2N2907AUB

JANTXV2N2907AUB Information

Description

Here's a concise introduction to the JANTXV2N2907AUB: The JANTXV2N2907AUB is a Small-Signal BJT (Bipolar Junction Transistor) from Sertech Laboratories Inc, designed for high-performance applications. This transistor offers exceptional power dissipation capability, low collector-emitter saturation voltage, and fast switching speed, making it suitable for demanding RF amplifiers, communication systems, and industrial control systems. Its low leakage current, great thermal performance, and high current gain ensure reliable operation in a wide range of temperatures. Additionally, the JANTXV2N2907AUB is qualified to MIL-PRF-19500/291, making it suitable for aerospace, defense, and military applications. With its ruggedness and reliability, this transistor is an excellent choice for various industries, including medical devices, automotive electronics, and sensor systems.

Features

According to the product information, the features of JANTXV2N2907AUB are:

High power dissipation capability
Low collector-emitter saturation voltage
Fast switching speed
Low leakage current
Great thermal performance
High current gain
Wide operating temperature range
Excellent ruggedness and reliability
Qualified to MIL-PRF-19500/291

Manufacturer

The manufacturer of the JANTXV2N2907AUB is Sertech Laboratories Inc.

Applications

According to the product information, the application areas of JANTXV2N2907AUB are:

RF amplifiers
Communication systems
Industrial control systems
Power management systems
Aerospace and defense applications
Military equipment
Satellite communications
Medical devices
Automotive electronics
Sensor systems

Equivalent

Based on the product information, the equivalent products of JANTXV2N2907AUB are likely to be other small-signal BJTs (Bipolar Junction Transistors) with similar specifications and applications. Some possible alternatives could include:

ON Semiconductor NPN transistor
Fairchild Semiconductor BJT
STMicroelectronics N-channel power transistor

Please note that the exact equivalent products may vary depending on specific requirements and application.

Specifications

Pbfree Code	No	Part Life Cycle Code	Transferred
Pin Count	4	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Collector Current-Max (IC)	0.6 A
Collector-Emitter Voltage-Max	60 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	100	JESD-30 Code	R-XDSO-N3
JESD-609 Code	e0	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	200 °C
Polarity/Channel Type	PNP	Power Dissipation-Max (Abs)	0.4 W
Qualification Status	Qualified	Reference Standard	MIL-19500/291M
Surface Mount	YES	Terminal Finish	TIN LEAD
Terminal Form	NO LEAD	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	300 ns	Turn-on Time-Max (ton)	45 ns
Transistor Type	PNP	Current - Collector (Ic) (Max)	600 mA
Voltage - Collector Emitter Breakdown (Max)	60 V	Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Power - Max	500 mW	Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)	Grade	Military
Qualification	MIL-PRF-19500/291	Mounting Type	Surface Mount
Base Product Number	2N2907	Package/Case	LCC-3