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In Stock: 7,072
Projected end of life: 2048-10-03
JANTX2N3637
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The JANTX2N3637 is a high-reliability NPN transistor designed for critical applications, particularly in the military and aerospace industries. It features a hermetically sealed metal TO-18 package, offering low noise figure and high power gain. This transistor operates over a wide temperature range, making it suitable for demanding environments. The JANTX2N3637 is suitable for various applications such as power supplies, switching circuits, signal amplification, motor control, instrumentation, linear amplification, voltage regulation, audio amplification, and industrial control systems. Its high-voltage and high-current capabilities make it an excellent choice for applications requiring a reliable and efficient transistor. Overall, the JANTX2N3637 is a robust and dependable NPN transistor that can withstand harsh conditions while providing consistent performance in various applications.
According to the product information, the features of JANTX2N3637 are:
These features make JANTX2N3637 suitable for various applications such as power supplies, switching applications, signal amplification, motor control, instrumentation, linear amplification, voltage regulation, audio amplification, industrial control systems, and military & aerospace applications.
The package type of JANTX2N3637 is TO-5.
The manufacturer of the JANTX2N3637 is Crystalonics Inc, a company that specializes in producing high-reliability semiconductor components for demanding applications such as military and aerospace industries.
JANTX2N3637 is suitable for various applications including power supplies, switching, signal amplification, motor control, instrumentation, linear amplification, voltage regulation, audio amplification, industrial control systems, and military/aerospace applications. These are listed in the "Application" section of its product description.
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
---|---|---|---|
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 175 V | Collector- Base Voltage VCBO | 175 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 300 mV |
Maximum DC Collector Current | 1 A | Pd - Power Dissipation | 1 W |
Gain Bandwidth Product fT | - | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 200 C | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si | Package/Case | TO-5 |
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Quantity
Unit Price
Ext. Price
1+
$28.819
$28.82
200+
$11.500
$2,300.00
500+
$11.115
$5,557.50
1000+
$10.925
$10,925.00
*The prices above are for reference only.
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