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JANTX2N2907A

In Stock: 5,132

Product JANTX2N2907A falls under the category of small-signal Bipolar Junction Transistors (BJTs)

Manufacturers:
Microchip Technology, Inc
Mfr.Part#:
JANTX2N2907A
Package/Case:
TO-18-3
Product Type:
Single Bipolar Transistors
Lifecycle:
Active
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JANTX2N2907A Information

Description

The Microchip Technology JANTX2N2907A is a small-signal PNP silicon transistor designed for high-reliability applications. It features high current (600 mA) and voltage (40 V) ratings, low noise and power dissipation, and a high gain of 40 to 320. This transistor is available in a hermetically sealed TO-18 package and meets the JANTX qualification standard for military-grade components. The JANTX2N2907A is suitable for various applications, including electronic circuit design, aerospace industry, satellite communication systems, military applications, automotive industry, industrial control systems, medical equipment, telecommunications, security systems, and power supply units. Its high-reliability features make it an excellent choice for mission-critical systems that require low noise and high gain performance.

Features

The Microchip JANTX2N2907A is a PNP silicon transistor with the following features:

High current (600 mA) and voltage (40 V) ratings
Low noise and low power dissipation
High gain (hFE) of 40 to 320
Available in a hermetically sealed TO-18 package
Military grade with JANTX qualification

This transistor is suitable for various applications such as electronic circuit design, aerospace industry, satellite communication systems, military applications, automotive industry, industrial control systems, medical equipment, telecommunications, security systems, and power supply units.

Package

The package type of JANTX2N2907A is TO-18-3-3.

Manufacturer

The manufacturer of the JANTX2N2907A is Microchip Technology, a leading provider of microcontrollers, memory products, and analog semiconductors.

Applications

According to the product information, the application areas for JANTX2N2907A are: • Electronic circuit design • Aerospace industry • Satellite communication systems • Military applications • Automotive industry • Industrial control systems • Medical equipment • Telecommunications • Security systems • Power supply units

Equivalent

The equivalent products of JANTX2N2907A are:

NTE Electronics NTE540
ON Semiconductor MMBT3904
Fairchild Semiconductor 2N3906
Texas Instruments SN540
Motorola MJE340

These transistors have similar specifications and applications as the JANTX2N2907A.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	400 mV
Maximum DC Collector Current	600 mA	Pd - Power Dissipation	500 mW
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Technology	Si
Unit Weight	0.081218 oz	Package/Case	TO-18-3

JANTX2N2907A FAQs

1.Q: What related parts might complement this PNP transistor in designs?

A: Complementary NPN transistors with similar ratings from Semicoa's military-grade product line would be suitable.

2.Q: What are the recommended operating conditions for this 0.6A switching transistor?

A: Operate within: -65°C to +200°C junction temperature, ≤0.4W power dissipation, and ≤60V CE voltage.

3.Q: What is the package information for Semicoa's metal can PNP transistor?

A: TO-206AA (TO-18) hermetically sealed metal can, cylindrical shape (O-MBCY-W3), 3-pin bottom wire terminals.

4.Q: What industry standards does this hermetic TO-18 transistor comply with?

A: It meets MIL-19500/291 standard and is qualified for high-reliability applications.

5.Q: What are the electrical characteristics of this 200MHz fT PNP transistor?

A: Key specs: hFE ≥50, ton ≤45ns, toff ≤300ns, with Tin-Lead plated terminals (e0 JESD-609 code).

6.Q: What are the absolute maximum ratings for this TO-18 packaged transistor?

A: Max ratings: 60V Collector-Emitter Voltage, 0.6A Collector Current, 0.4W Power Dissipation, and -65°C to +200°C operating temperature.

7.Q: What are typical applications for this 60V PNP silicon transistor?

A: It's designed for switching applications in military/aerospace systems, high-reliability industrial controls, and high-temperature environments.

8.Q: What are the key features of Semicoa's PNP transistor with 60V V(BR)CEO?

A: Key features include: 0.6A collector current, 200MHz transition frequency, 300ns max turn-off time, and hermetic metal packaging for reliability.

9.Q: What is the pinout configuration of the Semicoa Semiconductors PNP transistor in TO-18 package?

A: The TO-18 metal can package has 3 wire terminals in bottom position: Emitter (E), Base (B), and Collector (C).

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