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JANS2N3421S +BOM

Bipolar (BJT) Transistor NPN 80 V 3 A 1 W Through Hole TO-39 (TO-205AD)

JANS2N3421S Information

General Description

Bipolar (BJT) Transistor NPN 80 V 3 A 1 W Through Hole TO-39 (TO-205AD)

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Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 125 V
Emitter- Base Voltage VEBO 8 V Collector-Emitter Saturation Voltage 500 mV
Pd - Power Dissipation 5 W Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C Continuous Collector Current 3 A
DC Current Gain hFE Max 120 at 1 A, 2 V Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si Package/Case TO-5-3

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