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JAN2N6766 +BOM
Low-voltage, high-current switch for demanding systems requirements
TO-204-
Manufacturer:
Microsemi Corporation
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Mfr.Part #:
JAN2N6766
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
200 V
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Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
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EDA/CAD Models:
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Availability: 4697 PCS
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JAN2N6766 Information
Avaq Semiconductor offers the highly versatile and reliable JAN2N6766 driver, produced by Microsemi Corporation. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the JAN2N6766.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Specifications
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V | Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 90mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
Vgs (Max) | ±20V | Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Grade | Military |
Qualification | MIL-PRF-19500/543 | Mounting Type | Through Hole |
Package/Case | TO-204 |
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In Stock: 4,697
Minimum Order: 1
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The prices above are for reference only.