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JAN2N6193 +BOM

Trans GP BJT PNP 100V 5A 1000mW 3-Pin TO-39 Bag

  • Manufacturer:

    Microchip Technology

  • Mfr.Part #:

    JAN2N6193

  • Datasheet:

    JAN2N6193 Datasheet (PDF) pdf-icon

  • Transistor Type:

    PNP

  • Current - Collector (Ic) (Max):

    5 A

  • Voltage - Collector Emitter Breakdown (Max):

    100 V

  • Vce Saturation (Max) @ Ib, Ic:

    1.2V @ 500mA, 5A

JAN2N6193 General Description

Bipolar (BJT) Transistor PNP 100 V 5 A 1 W Through Hole TO-39 (TO-205AD)

Specifications

Series - Transistor Type PNP
Current - Collector (Ic) (Max) 5 A Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 500mA, 5A Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A, 2V Power - Max 1 W
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/561
Mounting Type Through Hole

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