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JAN2N3960 +BOM

Bipolar (BJT) Transistor NPN 12 V 400 mW Through Hole TO-18 (TO-206AA)

  • Manufacturer:

    Microsemi Corporation

  • Mfr.Part #:

    JAN2N3960

  • Datasheet:

    JAN2N3960 Datasheet (PDF) pdf-icon

  • Transistor Type:

    NPN

  • Voltage - Collector Emitter Breakdown (Max):

    12 V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 3mA, 30mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

JAN2N3960 General Description

Bipolar (BJT) Transistor NPN 12 V 400 mW Through Hole TO-18 (TO-206AA)

Specifications

Series - Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12 V Vce Saturation (Max) @ Ib, Ic 300mV @ 3mA, 30mA
Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 1V
Power - Max 400 mW Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ) Grade Military
Qualification MIL-PRF-19500/399 Mounting Type Through Hole
Base Product Number 2N3960

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