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JAN2N3868

Trans GP BJT PNP 60V 3A 1000mW 3-Pin TO-5 Bag

  • Manufacturer:

    Microchip Technology

  • Mfr.Part #:

    JAN2N3868

  • Datasheet:

    JAN2N3868 Datasheet (PDF) pdf-icon

  • Transistor Type:

    PNP

  • Current - Collector (Ic) (Max):

    3 mA

  • Voltage - Collector Emitter Breakdown (Max):

    60 V

  • Vce Saturation (Max) @ Ib, Ic:

    1.5V @ 250mA, 2.5A

JAN2N3868 General Description

Bipolar (BJT) Transistor PNP 60 V 3 mA 1 W Through Hole TO-5

Specifications

Series - Transistor Type PNP
Current - Collector (Ic) (Max) 3 mA Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 1.5A, 2V Power - Max 1 W
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/350
Mounting Type Through Hole

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Availability: 6630 PCS

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