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JAN2N3636 +BOM

Bipolar (BJT) Transistor PNP 175 V 1 A 1 W Through Hole TO-39 (TO-205AD)

  • Manufacturer:

    Microchip Technology

  • Mfr.Part #:

    JAN2N3636

  • Datasheet:

    JAN2N3636 Datasheet (PDF) pdf-icon

  • Transistor Type:

    PNP

  • Current - Collector (Ic) (Max):

    1 A

  • Voltage - Collector Emitter Breakdown (Max):

    175 V

  • Vce Saturation (Max) @ Ib, Ic:

    600mV @ 5mA, 50mA

JAN2N3636 General Description

Bipolar (BJT) Transistor PNP 175 V 1 A 1 W Through Hole TO-39 (TO-205AD)

Specifications

Series - Transistor Type PNP
Current - Collector (Ic) (Max) 1 A Voltage - Collector Emitter Breakdown (Max) 175 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 10V Power - Max 1 W
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/357
Mounting Type Through Hole Base Product Number 2N3636

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In Stock: 6,953

Minimum Order: 1
Qty. Unit Price Ext. Price
1+ $27.682 $27.68
200+ $11.046 $2,209.20
500+ $10.676 $5,338.00
1000+ $10.493 $10,493.00

The prices below are for reference only.