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JAN2N3499 +BOM

Trans GP BJT NPN 100V 0.5A 1000mW 3-Pin TO-39 Bag

  • Manufacturer:

    Microchip Technology

  • Mfr.Part #:

    JAN2N3499

  • Datasheet:

    JAN2N3499 Datasheet (PDF) pdf-icon

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    500 mA

  • Voltage - Collector Emitter Breakdown (Max):

    100 V

  • Vce Saturation (Max) @ Ib, Ic:

    600mV @ 30mA, 300mA

JAN2N3499 General Description

Bipolar (BJT) Transistor NPN 100 V 500 mA 1 W Through Hole TO-39 (TO-205AD)

Specifications

Series - Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 1 W
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/366
Mounting Type Through Hole Base Product Number 2N3499

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In Stock: 6,814

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $42.112 $42.11
200+ $16.803 $3,360.60
500+ $16.242 $8,121.00
1000+ $15.965 $15,965.00

The prices below are for reference only.