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JAN2N3440 +BOM

Trans GP BJT NPN 250V 1A 800mW 3-Pin TO-39 Bag

  • Manufacturer:

    Microchip Technology

  • Mfr.Part #:

    JAN2N3440

  • Datasheet:

    JAN2N3440 Datasheet (PDF) pdf-icon

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    1 A

  • Voltage - Collector Emitter Breakdown (Max):

    250 V

  • Vce Saturation (Max) @ Ib, Ic:

    500mV @ 4mA, 50mA

JAN2N3440 General Description

Bipolar (BJT) Transistor NPN 250 V 1 A 800 mW Through Hole TO-39

Specifications

Series - Transistor Type NPN
Current - Collector (Ic) (Max) 1 A Voltage - Collector Emitter Breakdown (Max) 250 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA Current - Collector Cutoff (Max) 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Power - Max 800 mW
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/368
Mounting Type Through Hole

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