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JAN2N3251A +BOM

Bipolar (BJT) Transistor PNP 60 V 200 mA 360 mW Through Hole TO-39 (TO-205AD)

  • Manufacturer:

    Microsemi Corporation

  • Mfr.Part #:

    JAN2N3251A

  • Datasheet:

    JAN2N3251A Datasheet (PDF) pdf-icon

  • Transistor Type:

    PNP

  • Current - Collector (Ic) (Max):

    200 mA

  • Voltage - Collector Emitter Breakdown (Max):

    60 V

  • Vce Saturation (Max) @ Ib, Ic:

    500mV @ 5mA, 50mA

JAN2N3251A General Description

Bipolar (BJT) Transistor PNP 60 V 200 mA 360 mW Through Hole TO-39 (TO-205AD)

Specifications

Series - Transistor Type PNP
Current - Collector (Ic) (Max) 200 mA Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V Power - Max 360 mW
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/323
Mounting Type Through Hole Base Product Number 2N3251

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