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JAN2N2907A

In Stock: 7,142

Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18 (TO-206AA)

Manufacturers:
Microchip Technology, Inc
Mfr.Part#:
JAN2N2907A
Package/Case:
TO-18-3
Product Type:
Single Bipolar Transistors
EDA/CAD Models:
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JAN2N2907A Information

Description

The JAN2N2907A is a PNP Bipolar Junction Transistor (BJT) from ON Semiconductor, packaged in a TO-18 metal can. It's designed for general-purpose applications such as audio amplifiers, switching circuits, signal processing, power supplies, and oscillators. This transistor has a maximum collector-base voltage of -60V, collector-emitter voltage of -40V, and emitter-base voltage of -5V. Its maximum continuous collector current is 600mA, with a power dissipation rating of 625mW. The transition frequency is 100MHz, making it suitable for high-frequency applications. The JAN2N2907A is an excellent choice for designers seeking a reliable and versatile transistor for various electronic projects.

Features

According to the product information, the features of the JAN2N2907A are:

PNP Bipolar Junction Transistor
Maximum Collector-Base Voltage: -60V
Maximum Collector-Emitter Voltage: -40V
Maximum Emitter-Base Voltage: -5V
Maximum Continuous Collector Current: -600mA
Power Dissipation: 625mW
Transition Frequency: 100MHz

These features make it suitable for various applications such as audio amplifiers, switching circuits, signal processing, power supplies, and oscillators.

Package

The JAN2N2907A has two package types: TO-206AA and TO-18-3 Metal Can. These packages provide a hermetic seal to protect the transistor from environmental factors while also allowing for efficient heat dissipation.

Pinout

The JAN2N2907A is a PNP Bipolar Junction Transistor (BJT) with a TO-18 package. It has 3 pins:

Base (B): Input pin for controlling the transistor's operation
Collector (C): Output pin that connects to the load or next stage in a circuit
Emitter (E): Output pin that provides the output signal

The JAN2N2907A is designed for general-purpose amplification, switching, and signal processing applications. It can be used as an amplifier, switch, or oscillator in various electronic circuits.

Manufacturer

The manufacturer of the JAN2N2907A is ON Semiconductor, a leading global semiconductor company that designs, manufactures, and markets a wide range of semiconductor solutions for various industries, including automotive, industrial, medical, and consumer electronics.

Applications

The JAN2N2907A PNP transistor can be used in audio amplifiers, switching circuits, signal processing circuits, power supplies, and oscillators due to its high switching speed, low saturation voltage, and moderate current gain. Its applications include amplifying low-level audio signals, regulating voltage and current levels, generating frequency signals, and more.

Equivalent

The equivalent products of JAN2N2907A are:

NTE Electronics: NTE291
Fairchild Semiconductor: 2N3906
Motorola: MJE340
STMicroelectronics: BD241

Please note that these equivalents may have slightly different specifications or packaging, but they serve the same general purpose as the JAN2N2907A.

Specifications

Pbfree Code	No	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	16 Weeks
Collector Current-Max (IC)	0.6 A	Collector-Emitter Voltage-Max	60 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	50
JEDEC-95 Code	TO-18	JESD-30 Code	O-MBCY-W3
JESD-609 Code	e0	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	200 °C
Operating Temperature-Min	-65 °C	Polarity/Channel Type	PNP
Power Dissipation-Max (Abs)	0.4 W	Qualification Status	Qualified
Reference Standard	MIL-19500/291	Surface Mount	NO
Terminal Finish	TIN LEAD	Terminal Form	WIRE
Terminal Position	BOTTOM	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	200 MHz
Turn-off Time-Max (toff)	300 ns	Turn-on Time-Max (ton)	45 ns
Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Collector- Emitter Voltage VCEO Max	60 V
Collector- Base Voltage VCBO	60 V	Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	400 mV	Maximum DC Collector Current	600 mA
Pd - Power Dissipation	500 mW	Gain Bandwidth Product fT	-
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Technology	Si
Unit Weight	0.082453 oz	Package/Case	TO-18-3

JAN2N2907A FAQs

1.Q: Is this transistor suitable for high-frequency switching applications?

A: Yes, its transition frequency (fT) of 200MHz and fast switching times (ton/toff) make it suitable for moderate-speed switching circuits.

2.Q: Can you suggest related parts to this Raytheon Semiconductor PNP transistor?

A: For complementary designs, consider NPN transistors with similar ratings (e.g., 60V Vceo, 0.6A Ic) from the same manufacturer or equivalent MIL-spec series.

3.Q: What are the recommended operating conditions for this transistor?

A: Operate within Ic <0.6A, Vce <60V, power dissipation <0.4W, and temperatures between -65°C to +200°C for optimal performance.

4.Q: Which industry certification standards does this transistor comply with?

A: It meets the MIL-19500/291 standard, ensuring reliability for military and high-reliability applications.

5.Q: What package is used for this hermetic silicon PNP transistor?

A: It is housed in a TO-18 (TO-206AA) metal can package with a cylindrical shape, hermetic sealing, and three wire terminals.

6.Q: What are the electrical characteristics of this PNP transistor regarding DC gain and switching speed?

A: It has a minimum DC current gain (hFE) of 50, turn-on time (ton) ≤45ns, and turn-off time (toff) ≤300ns under typical conditions.

7.Q: What are the absolute maximum ratings for this Raytheon Semiconductor transistor?

A: Absolute maxima: Vceo = 60V, Ic = 0.6A, power dissipation = 0.4W, operating temperature = -65°C to +200°C. Exceeding these may damage the device.

8.Q: What are typical applications for this 60V/0.6A PNP transistor?

A: It is commonly used in switching circuits, power management, driver stages, and low-power amplification in industrial or military environments.

9.Q: What are the key features of the Raytheon Semiconductor 60V PNP transistor?

A: Key features include PNP polarity, 60V collector-emitter voltage, 0.6A max collector current, 200MHz transition frequency, and hermetic metal can packaging for reliability.

10.Q: What is the pinout configuration of the Raytheon Semiconductor PNP transistor (TO-18 Metal Can)?

A: The standard pinout for the TO-18 package (Bottom view) is: 1 - Emitter, 2 - Base, 3 - Collector. Confirm with the datasheet for exact orientation.

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