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JAN2N2906A +BOM

Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18 Bag

  • Manufacturer:

    Microchip Technology

  • Mfr.Part #:

    JAN2N2906A

  • Datasheet:

    JAN2N2906A Datasheet (PDF) pdf-icon

  • Transistor Type:

    PNP

  • Current - Collector (Ic) (Max):

    600 mA

  • Voltage - Collector Emitter Breakdown (Max):

    60 V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

JAN2N2906A General Description

Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18

Specifications

Series - Transistor Type PNP
Current - Collector (Ic) (Max) 600 mA Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V Power - Max 500 mW
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/291
Mounting Type Through Hole Base Product Number 2N2906

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In Stock: 7,812

Minimum Order: 1
Qty. Unit Price Ext. Price
1+ $9.488 $9.49
200+ $3.787 $757.40
500+ $3.661 $1,830.50
1000+ $3.598 $3,598.00

The prices below are for reference only.