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JAN2N2484UA/TR +BOM

Bipolar Transistors - BJT BJTs

JAN2N2484UA/TR Information

General Description

Bipolar (BJT) Transistor NPN 60 V 50 mA 360 mW Surface Mount UA

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Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 50 mA Pd - Power Dissipation 360 mW
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 45 at 1 uA, 5 V DC Current Gain hFE Max 800 at 500 uA, 5 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si
Package/Case LCC-4

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