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JAN2N2484

Bipolar (BJT) Transistor NPN 60 V 50 mA 360 mW Through Hole TO-18

  • Manufacturer:

    Microchip Technology

  • Mfr.Part #:

    JAN2N2484

  • Datasheet:

    JAN2N2484 Datasheet (PDF) pdf-icon

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    50 mA

  • Voltage - Collector Emitter Breakdown (Max):

    60 V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 100µA, 1mA

JAN2N2484 General Description

Bipolar (BJT) Transistor NPN 60 V 50 mA 360 mW Through Hole TO-18

Specifications

Series - Transistor Type NPN
Current - Collector (Ic) (Max) 50 mA Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 100µA, 1mA Current - Collector Cutoff (Max) 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce 225 @ 10mA, 5V Power - Max 360 mW
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/376
Mounting Type Through Hole Base Product Number 2N2484

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