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JAN2N2222A

In Stock: 5,635

Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-218

JAN2N2222A Information

Description

The JAN2N2222A is a general-purpose NPN bipolar junction transistor (BJT) from Microchip Technology. It's designed for high-frequency applications, offering high current capability, low voltage rating, and low power dissipation. This transistor features fast switching speeds and is suitable for a wide range of applications. In amplifier circuits, it can handle up to 600mA of current and has a maximum voltage rating of 40V. Its TO-18 metal can package makes it easy to integrate into various designs. The JAN2N2222A is available in bulk quantities and is suitable for use in audio, communication, motor control, power supply, pulse, oscillator, sensor, switching, and other circuits. Overall, the JAN2N2222A is a reliable and versatile transistor that can be used in a variety of applications where high current and low voltage are required.

Features

The JAN2N2222A features:

  • High current (600mA) capability
  • Low voltage (40V) rating
  • Low power (500mW) dissipation
  • Fast switching speeds
  • General purpose NPN bipolar junction transistor
  • TO-18 metal can package
  • Suitable for a wide range of applications
  • Available in bulk quantities

Package

According to the product information, the package type of JAN2N2222A is TO-18 metal can package.

Pinout

According to the product information, the JAN2N2222A has a category name "Trans GP BJT NPN" which indicates that it's a bipolar junction transistor (BJT). It belongs to TO-18 package type. The pin count of this component is 3-Pin and the function is described as General purpose NPN bipolar junction transistor, suggesting it's a basic amplifier, switching, or digital circuit application.

Manufacturer

The manufacturer of the JAN2N2222A is Microchip Technology, a semiconductor company that designs, manufactures, and sells specialized semiconductor products used in a wide range of applications, including consumer electronics, automotive systems, industrial control systems, and more.

Applications

According to the product information, the JAN2N2222A has several application areas: • Amplifier circuits • Switching circuits • Oscillator circuits • Pulse circuits • Sensor circuits • Motor control circuits • Power supply circuits • LED driver circuits • Audio circuits • Communication circuits

Equivalent

Based on the product information, the equivalent products of JAN2N2222A are:

  • NTE Electronics: 2N2222
  • ON Semiconductor: MMBT2222A
  • Fairchild Semiconductor: 2N2222A
  • Texas Instruments: TIP142

These transistors have similar specifications and characteristics to the JAN2N2222A, making them suitable alternatives for various applications.

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
Case Connection COLLECTOR Collector Current-Max (IC) 0.8 A
Collector-Emitter Voltage-Max 50 V Configuration SINGLE
DC Current Gain-Min (hFE) 30 JEDEC-95 Code TO-206AA
JESD-30 Code O-MBCY-W3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 200 °C Operating Temperature-Min -65 °C
Polarity/Channel Type NPN Qualification Status Qualified
Reference Standard MIL-19500/255 Surface Mount NO
Terminal Finish TIN LEAD Terminal Form WIRE
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 35 ns Package/Case LCC-3

JAN2N2222A FAQs

1.Q: What is the package type and material of this transistor?

A: It uses a TO-18 (TO-206AA) metal can package (cylindrical, hermetic sealed) with 3 wire terminals.

2.Q: What certification standards apply to this transistor?

A: It meets MIL-19500/255 standards and is qualified for high-reliability applications (hermetic metal can).

3.Q: Is this Semicoa transistor RoHS compliant?

A: No, it has a Tin-Lead (SnPb) finish and is not RoHS compliant.

4.Q: What is the typical DC current gain (hFE) of this transistor?

A: The minimum DC current gain (hFE) is 30 under specified test conditions (check datasheet for exact bias conditions).

5.Q: What are the absolute maximum ratings for this transistor?

A: Max ratings: 50V Collector-Emitter voltage (VCEO), 0.8A Collector current (IC), 0.5W power dissipation (Pd), and -65°C to +200°C operating temperature.

6.Q: What are typical applications for this NPN transistor?

A: It’s designed for switching applications, RF amplification, and high-reliability military/aerospace systems due to its hermetic sealing.

7.Q: What are the key features of this NPN transistor?

A: Key features include: 50V V(BR)CEO, 0.8A max collector current, 300MHz transition frequency (fT), and hermetic metal can packaging for reliability.

8.Q: What is the pinout configuration of the Semicoa NPN transistor in TO-18 package?

A: The pinout (from bottom view) is: 1-Emitter, 2-Base, 3-Collector (standard TO-18 metal can configuration).

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$7.189

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$7.031

$70.31

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