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IXTK120N65X2 +BOM

N-Channel 650 V 120A (Tc) 1250W (Tc) Through Hole TO-264 (IXTK)

IXTK120N65X2 Information

General Description

The IXTK120N65X2 is a cutting-edge product developed with the charge compensation principle and proprietary process technology. These advanced devices offer exceptional on-state resistances, low gate charges, and superior dv/dt performance, setting a new standard in the industry. Their avalanche capability further enhances the ruggedness of the device, making it a reliable choice for various applications. Additionally, the fast soft-recovery body diode featured in these Ultra-Junction MOSFETs helps minimize switching losses and electromagnetic interference (EMI), leading to improved efficiency and performance

Key Features

  • Fast switching times
  • High current handling
  • Low thermal resistance

Application

  • Innovative energy inverters

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 120 A Rds On - Drain-Source Resistance 23 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 230 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 mW
Channel Mode Enhancement Tradename HiPerFET
Configuration Single Fall Time 10 ns
Product Power MOSFET Modules Product Type MOSFET
Rise Time 24 ns Factory Pack Quantity 25
Subcategory MOSFETs Type X2-Class
Typical Turn-Off Delay Time 87 ns Typical Turn-On Delay Time 32 ns
Unit Weight 0.211644 oz Package/Case TO-247-3

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