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IXTK120N65X2 +BOM
N-Channel 650 V 120A (Tc) 1250W (Tc) Through Hole TO-264 (IXTK)
TO-247-3-
Manufacturer:
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Mfr.Part #:
IXTK120N65X2
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 7072 PCS
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IXTK120N65X2 Information
General Description
The IXTK120N65X2 is a cutting-edge product developed with the charge compensation principle and proprietary process technology. These advanced devices offer exceptional on-state resistances, low gate charges, and superior dv/dt performance, setting a new standard in the industry. Their avalanche capability further enhances the ruggedness of the device, making it a reliable choice for various applications. Additionally, the fast soft-recovery body diode featured in these Ultra-Junction MOSFETs helps minimize switching losses and electromagnetic interference (EMI), leading to improved efficiency and performance
Key Features
- Fast switching times
- High current handling
- Low thermal resistance
Application
- Innovative energy inverters
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 120 A | Rds On - Drain-Source Resistance | 23 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 230 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 mW |
Channel Mode | Enhancement | Tradename | HiPerFET |
Configuration | Single | Fall Time | 10 ns |
Product | Power MOSFET Modules | Product Type | MOSFET |
Rise Time | 24 ns | Factory Pack Quantity | 25 |
Subcategory | MOSFETs | Type | X2-Class |
Typical Turn-Off Delay Time | 87 ns | Typical Turn-On Delay Time | 32 ns |
Unit Weight | 0.211644 oz | Package/Case | TO-247-3 |
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In Stock: 7,072
Minimum Order: 1
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