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IXTH80N65X2 Image
IXTH80N65X2 Image
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IXTH80N65X2

In Stock: 3,848

High Voltage N-channel Transistor

IXTH80N65X2 Information

Description

The IXTH80N65X2 is a high-performance N-channel power transistor designed for use in demanding applications such as industrial power supplies, electric vehicle chargers, and motor drives. Key features include low on-resistance for efficient energy conversion, robust gate control and body diode characteristics, making it suitable for harsh operating conditions. In an introduction to this device, one would highlight its suitability for high-power density applications, its efficiency-boosting design, and its proven performance in various industrial and transportation systems.

Features

The IXTH80N65X2 features include:
Ultra-low on-resistance for efficient power transfer.
Digital Signal (DS) ON for advanced control and monitoring.
Fast gate charge Q for quicker switching performance.
Robust through-hole TO-247 package for easy assembly.
International standard packages support broader compatibility.
High efficiency and power density suitable for power supply, EV chargers, and more. These features enable the IXTH80N65X2 to perform robustly in a variety of demanding applications.

Package

The package type of IXTH80N65X2 is TO-247, a through-hole package.

Manufacturer

The manufacturer of the IXTH80N65X2 is Ixys, a semiconductor company. Founded in the early 1980s, Ixys specializes in power and mixed-signal IC solutions for various industries including power supplies, motor control, and renewable energy.

Applications

The IXTH80N65X2 is a high-power N-channel MOSFET designed for industrial power supplies, EV battery chargers, motor drives, DC-DC converters, renewable energy inverters, and PFC circuits in robotics and servo control.

Equivalent

The equivalent product of IXTH80N65X2 from Ixys is likely another high-power N-channel MOSFET with similar voltage and current ratings, like IXTH series other models.

IXTH80N65X2 FAQs

1.Q: What are the recommended operating conditions for this Littelfuse MOSFET?

A: Operate within -55°C to +150°C, with gate drive voltage (V<sub>GS</sub>) typically ±20V. Ensure proper heatsinking for high-power dissipation.

2.Q: How does the built-in diode improve performance in Littelfuse's MOSFET?

A: The fast soft-recovery body diode reduces switching losses and EMI, making it suitable for high-frequency applications like resonant converters.

3.Q: What certifications or standards apply to Littelfuse's Ultra-Junction MOSFET?

A: It complies with RoHS (Yes), ECCN EAR99, and JEDEC TO-247 standards, but REACH non-compliant. Avalanche rating (3000mJ) ensures ruggedness.

4.Q: What is the thermal resistance of this MOSFET in TO-247-3?

A: The thermal resistance (junction-to-case, R<sub>θJC</sub>) is typically low due to the TO-247 package, but consult the datasheet for exact values.

5.Q: What are the absolute maximum ratings for the Littelfuse Ultra-Junction MOSFET?

A: Max ratings include 650V drain-source voltage (V<sub>DS</sub>), 80A continuous drain current (I<sub>D</sub>), 160A pulsed drain current (I<sub>DM</sub>), and 890W power dissipation (P<sub>D</sub>).

6.Q: What are typical applications for this Littelfuse MOSFET?

A: It’s ideal for high-power switching applications like industrial motor drives, SMPS (switched-mode power supplies), UPS systems, and solar inverters.

7.Q: What are the key features of Littelfuse's Ultra-Junction MOSFET?

A: Key features include ultra-low on-state resistance (0.038Ω), 650V breakdown voltage, 80A drain current, avalanche-rated ruggedness, fast soft-recovery diode, and low EMI switching performance.

8.Q: What is the pinout configuration of the Littelfuse Ultra-Junction MOSFET in TO-247-3 package?

A: The TO-247-3 package has three pins: Gate (G), Drain (D, case-connected), and Source (S). Refer to the datasheet for exact pin numbering.

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