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IXSN55N120A +BOM

IXSN55N120A Product Description: IGBT Transistors, 80 Amps, 1200V, 4 Rds

IGBT Module Single 1200 V 110 A 500 W Chassis Mount SOT-227B

Category	Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules	Series	-
IGBT Type	-	Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V	Current - Collector (Ic) (Max)	110 A
Power - Max	500 W	Vce(on) (Max) @ Vge, Ic	4V @ 15V, 55A
Current - Collector Cutoff (Max)	1 mA	Input Capacitance (Cies) @ Vce	8 nF @ 25 V
Input	Standard	NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Chassis Mount
Base Product Number	IXSN55	Product Category:	IGBT Transistors
Technology:	Si	Mounting Style:	SMD/SMT
Configuration:	Single Dual Emitter	Collector- Emitter Voltage VCEO Max:	1.2 kV
Maximum Gate Emitter Voltage:	- 20 V, + 20 V	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C	Series:	IXSN55N120
Packaging:	Tube	Continuous Collector Current Ic Max:	110 A
Height:	9.6 mm	Length:	38.2 mm
Product Type:	IGBT Transistors	Factory Pack Quantity:	10
Subcategory:	IGBTs	Width:	25.07 mm
Unit Weight:	1.058219 oz	Package/Case	Module