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60 Amps IGBT Transistors with 1.7V Vds
ModuleManufacturer:
Mfr.Part #:
IXGN60N60C2D1
Datasheet:
IGBT Type:
PT
Configuration:
Single
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
75 A
EDA/CAD Models:
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Here's a concise introduction to the IXYS IXGN60N60C2D1: The IXGN60N60C2D1 is an IGBT (Insulated Gate Bipolar Transistor) module from IXYS, designed for high-power applications. With a maximum continuous collector current of 60A and a maximum collector-emitter voltage of 600V, this device is suitable for demanding motor control, inverter, and power supply applications. The module features a fast switching speed and an on-state voltage of 2.0V, making it ideal for high-frequency switching operations. Its compact TO-268-2 package makes it easy to integrate into various systems. The IXGN60N60C2D1 is suitable for a wide range of applications, including motor drives, power supplies, induction heating, welding equipment, and more. Overall, the IXYS IXGN60N60C2D1 is a reliable and efficient IGBT module that can handle high-power demands while providing fast switching speeds and low on-state voltage.
According to the product information, the IXGN60N60C2D1 features:
These features suggest that this IGBT transistor is suitable for applications requiring high power and fast switching, such as motor control, inverters, and power supplies.
The package type of IXGN60N60C2D1 is TO-268-2.
The IXGN60N60C2D1 is a IGBT transistor module with a TO-268-2 package. It has 4 pins:
The pin functions are:
The manufacturer of the IXGN60N60C2D1 is IXYS. IXYS is a semiconductor company that specializes in designing, manufacturing, and marketing power semiconductors, including insulated gate bipolar transistors (IGBTs) like the one described in the product information.
According to the product information, the application areas of IXGN60N60C2D1 are:
Based on the specifications, some equivalent products to IXGN60N60C2D1 are:
Please note that these are just a few examples and there may be other equivalent products available in the market.
Category | Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules | IGBT Type | PT |
Configuration | Single | Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 75 A | Power - Max | 480 W |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A | Current - Collector Cutoff (Max) | 650 µA |
Input Capacitance (Cies) @ Vce | 4.75 nF @ 25 V | Input | Standard |
NTC Thermistor | No | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount | Base Product Number | IXGN60 |
Product Category: | IGBT Transistors | Technology: | Si |
Mounting Style: | SMD/SMT | Configuration: | Single Dual Emitter |
Collector- Emitter Voltage VCEO Max: | 600 V | Collector-Emitter Saturation Voltage: | 2.5 V |
Maximum Gate Emitter Voltage: | - 20 V, + 20 V | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Packaging: | Tube |
Continuous Collector Current: | 75 A | Continuous Collector Current Ic Max: | 100 A |
Height: | 9.6 mm | Length: | 38.2 mm |
Product Type: | IGBT Transistors | Factory Pack Quantity: | 10 |
Subcategory: | IGBTs | Width: | 25.07 mm |
Unit Weight: | 1.058219 oz | Package/Case | Module |
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