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IXGN60N60C2D1 +BOM

60 Amps IGBT Transistors with 1.7V Vds

IXGN60N60C2D1 Information

Description

Here's a concise introduction to the IXYS IXGN60N60C2D1: The IXGN60N60C2D1 is an IGBT (Insulated Gate Bipolar Transistor) module from IXYS, designed for high-power applications. With a maximum continuous collector current of 60A and a maximum collector-emitter voltage of 600V, this device is suitable for demanding motor control, inverter, and power supply applications. The module features a fast switching speed and an on-state voltage of 2.0V, making it ideal for high-frequency switching operations. Its compact TO-268-2 package makes it easy to integrate into various systems. The IXGN60N60C2D1 is suitable for a wide range of applications, including motor drives, power supplies, induction heating, welding equipment, and more. Overall, the IXYS IXGN60N60C2D1 is a reliable and efficient IGBT module that can handle high-power demands while providing fast switching speeds and low on-state voltage.

Features

According to the product information, the IXGN60N60C2D1 features:

  • Maximum Continuous Collector Current: 60A
  • Maximum Gate Emitter Voltage: ±20V
  • Maximum Collector Emitter Voltage: 600V
  • On-state Voltage: 2.0V
  • Switching Speed: Fast
  • Rds (Resistance in a state) of 1.7V

These features suggest that this IGBT transistor is suitable for applications requiring high power and fast switching, such as motor control, inverters, and power supplies.

Package

The package type of IXGN60N60C2D1 is TO-268-2.

Pinout

The IXGN60N60C2D1 is a IGBT transistor module with a TO-268-2 package. It has 4 pins:

  • Pin 1: Collector (C)
  • Pin 2: Gate (G)
  • Pin 3: Emitter (E)
  • Pin 4: Collector Lead (not connected)
  • The pin functions are:

  • C: Collector, connects to the load
  • G: Gate, controls the transistor's switching action
  • E: Emitter, connects to the negative rail or ground
  • Not connected: This pin is not used and should be left unconnected.

Manufacturer

The manufacturer of the IXGN60N60C2D1 is IXYS. IXYS is a semiconductor company that specializes in designing, manufacturing, and marketing power semiconductors, including insulated gate bipolar transistors (IGBTs) like the one described in the product information.

Applications

According to the product information, the application areas of IXGN60N60C2D1 are:

  • Motor drives
  • Power supplies
  • Induction heating
  • Welding equipment
  • Lighting systems
  • Switching power supplies
  • Power factor correction
  • Solar inverters
  • Battery chargers
  • Uninterruptible power supplies

Equivalent

Based on the specifications, some equivalent products to IXGN60N60C2D1 are:

  • STP60NF65R
  • FGH40N60S
  • SEMIKRON SKM60G120CA
  • ON Semi NTHG60N60L

Please note that these are just a few examples and there may be other equivalent products available in the market.

ixgn60n60c2d1

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules IGBT Type PT
Configuration Single Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A Power - Max 480 W
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A Current - Collector Cutoff (Max) 650 µA
Input Capacitance (Cies) @ Vce 4.75 nF @ 25 V Input Standard
NTC Thermistor No Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Base Product Number IXGN60
Product Category: IGBT Transistors Technology: Si
Mounting Style: SMD/SMT Configuration: Single Dual Emitter
Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.5 V
Maximum Gate Emitter Voltage: - 20 V, + 20 V Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C Packaging: Tube
Continuous Collector Current: 75 A Continuous Collector Current Ic Max: 100 A
Height: 9.6 mm Length: 38.2 mm
Product Type: IGBT Transistors Factory Pack Quantity: 10
Subcategory: IGBTs Width: 25.07 mm
Unit Weight: 1.058219 oz Package/Case Module

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Ratings and Reviews

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M
M**i 03/13/2022

Excellent quality and price. Fast shipping

9

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