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See Technical Specifications

IXGH20N60AU1 +BOM

MOSFET for high power switching applications

Manufacturer:

IXYS Corporation
Mfr.Part #:

IXGH20N60AU1
Datasheet:

IXGH20N60AU1 Datasheet (PDF)
Voltage - Collector Emitter Breakdown (Max):

600 V
Current - Collector (Ic) (Max):

40 A
Vce(on) (Max) @ Vge, Ic:

3V @ 15V, 20A
Power - Max:

150 W
EDA/CAD Models:

Request Free CAD Models for IXGH20N60AU1

IXGH20N60AU1 General Description

Thermal management is crucial for the longevity of electronic devices, and the IXGH20N60AU1 doesn't disappoint with its built-in temperature sensor. This sensor provides real-time feedback to the system, enabling effective thermal management to prevent overheating and ensure the device's reliability over the long term. With the IXGH20N60AU1, you can trust that your high power switching applications will run smoothly and efficiently

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	40 A	Vce(on) (Max) @ Vge, Ic	3V @ 15V, 20A
Power - Max	150 W	Switching Energy	-
Input Type	Standard	Td (on/off) @ 25°C	-
Test Condition	-	Operating Temperature	-
Mounting Type	Through Hole	Base Product Number	IXGH20
Mount	Through Hole	Collector Emitter Breakdown Voltage	600 V
Collector Emitter Voltage (VCEO)	3 V	Max Collector Current	40 A
Max Power Dissipation	150 W	Package/Case	TO-247-3