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See Technical Specifications

IXGH20N60A +BOM

Providing electronic distribution services in France for over three decades

Manufacturer:

IXYS Corporation
Mfr.Part #:

IXGH20N60A
Datasheet:

IXGH20N60A Datasheet (PDF)
Voltage - Collector Emitter Breakdown (Max):

600 V
Current - Collector (Ic) (Max):

40 A
Current - Collector Pulsed (Icm):

80 A
Vce(on) (Max) @ Vge, Ic:

3V @ 15V, 20A
EDA/CAD Models:

Request Free CAD Models for IXGH20N60A

IXGH20N60A Information

General Description

The IXGH20N60A is a top-of-the-line Insulated Gate Bipolar Transistor (IGBT) that is perfect for applications requiring high efficiency and fast switching capabilities. With a maximum voltage rating of 600V and a continuous collector current rating of 40A, this IGBT is built to handle high power applications such as motor control, power supplies, and inverters. Its low saturation voltage and low switching losses make it an ideal choice for high frequency operations, while its TO-247 package ensures excellent thermal performance and high power density. Additionally, the built-in temperature sensor allows for accurate temperature monitoring, providing an added layer of reliability

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	40 A	Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 20A	Power - Max	150 W
Switching Energy	1.5mJ (off)	Input Type	Standard
Gate Charge	100 nC	Td (on/off) @ 25°C	100ns/600ns
Test Condition	480V, 20A, 82Ohm, 15V	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	IXGH20
Mount	Through Hole	Number of Pins	3
Weight	6.500007 g	Collector Emitter Breakdown Voltage	600 V
Collector Emitter Voltage (VCEO)	600 V	Element Configuration	Single
Max Collector Current	40 A	Max Operating Temperature	150 °C
Max Power Dissipation	150 W	Min Operating Temperature	-55 °C
Package/Case	TO-247-3