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See Technical Specifications

IXGH15N120BD1 +BOM

N-channel IGBT chip in TO-247AD package capable of handling 1200V, 30A current, and dissipating 150mW of power

Manufacturer:

IXYS Corporation
Mfr.Part #:

IXGH15N120BD1
Datasheet:

IXGH15N120BD1 Datasheet (PDF)
Voltage - Collector Emitter Breakdown (Max):

1200 V
Current - Collector (Ic) (Max):

30 A
Current - Collector Pulsed (Icm):

60 A
Vce(on) (Max) @ Vge, Ic:

3.2V @ 15V, 15A
EDA/CAD Models:

Request Free CAD Models for IXGH15N120BD1

IXGH15N120BD1 Information

General Description

Designed with low parasitic capacitance, the IXGH15N120BD1 minimizes switching losses and enhances performance at high frequencies, making it a highly versatile and adaptable solution for various industrial and automotive applications. Its ability to withstand high levels of power dissipation, coupled with its rugged design, guarantees longevity and durability even in the most demanding environments. Altogether, the IXGH15N120BD1 sets a new standard for IGBT technology, offering unparalleled performance, efficiency, and reliability

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	30 A	Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 15A	Power - Max	150 W
Switching Energy	1.75mJ (off)	Input Type	Standard
Gate Charge	69 nC	Td (on/off) @ 25°C	25ns/150ns
Test Condition	960V, 15A, 10Ohm, 15V	Reverse Recovery Time (trr)	40 ns
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXGH15	Mount	Through Hole
Number of Pins	3	Weight	6.500007 g
Collector Emitter Breakdown Voltage	1.2 kV	Collector Emitter Voltage (VCEO)	1.2 kV
Element Configuration	Single	Max Collector Current	30 A
Max Operating Temperature	150 °C	Max Power Dissipation	150 W
Min Operating Temperature	-55 °C	Reverse Recovery Time	40 ns
Package/Case	TO-247-3