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IXFP34N65X3 +BOM

MOSFET DISCRETE MOSFET 34A 650V X3 TO

Manufacturer:

IXYS
Mfr.Part #:

IXFP34N65X3
Datasheet:

IXFP34N65X3 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IXFP34N65X3

IXFP34N65X3 Information

General Description

This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg leading to an improvement in the Figure of Merit FOM: RDS(on) x Qg as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This series of power MOSFETs feature fast body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr)

Key Features

On-state resistance: RDS(ON) = 80mΩ
Avalanche rating: EAS = 750mJ
Gate threshold voltage: VTG = -4.5V

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	34 A	Rds On - Drain-Source Resistance	100 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	5.2 V
Qg - Gate Charge	29 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	446 W
Channel Mode	Enhancement	Product	MOSFETs
Product Type	MOSFET	Factory Pack Quantity	50
Subcategory	MOSFETs	Package/Case	TO-220-3