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IXFP30N60X Image
IXFP30N60X Image
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IXFP30N60X

In Stock: 3,557

Advanced power management with X-CLASS HIPER FET IXFP30N60X technology.

IXFP30N60X Information

Description

Ultra-Junction X-Class Power MOSFETs with fast body diodesare rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dtperformance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).
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Features

  • Ultra low on-resistance R
  • DS(ON)
  • and gate charge Q
  • g
  • Fast body diode
  • dv/dt ruggedness
  • Avalanche rated
  • Low package inductance
  • International standard packages
  • Advantages:
  • Higher efficiency
  • High power density
  • Easy to mount
  • Space savings

Applications

  • Industrial switched-mode and resonant-mode power supplies
  • Electric vehicle battery chargers
  • AC and DC motor drives
  • DC-DC converters
  • Renewable-energy inverters
  • Power Factor Correction (PFC) circuits
  • Robotics and servo control

Specifications

Drain-Source Voltage (V) 600 Maximum On-Resistance @ 25 ℃ (Ohm) 0.155
Continuous Drain Current @ 25 ℃ (A) 30 Gate Charge (nC) 56
Input Capacitance, CISS (pF) 2270 Thermal resistance [junction-case] (K/W) 0.25
Configuration Single Typical Reverse Recovery Time (ns) 145
Power Dissipation (W) 500 Sample Request Yes
Check Stock Yes Package/Case TO-220-3

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Reference Price(USD)

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Quantity

Unit Price

Ext. Price

1000+

$4.262

$4,262.00

500+

$4.336

$2,168.00

200+

$4.486

$897.20

1+

$11.242

$11.24

*The prices above are for reference only.

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Service Support

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164


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