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See Technical Specifications

IXFP30N60X +BOM

Advanced power management with X-CLASS HIPER FET IXFP30N60X technology.

Manufacturer:

Littelfuse
Mfr.Part #:

IXFP30N60X
Datasheet:

IXFP30N60X Datasheet (PDF)
Drain-Source Voltage (V):

600
Maximum On-Resistance @ 25 ℃ (Ohm):

0.155
Continuous Drain Current @ 25 ℃ (A):

30
Gate Charge (nC):

56
EDA/CAD Models:

Request Free CAD Models for IXFP30N60X

IXFP30N60X Information

General Description

Ultra-Junction X-Class Power MOSFETs with fast body diodesare rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dtperformance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).

Key Features

Ultra low on-resistance R
DS(ON)
and gate charge Q
g
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Advantages:
Higher efficiency
High power density
Easy to mount
Space savings

Application

Industrial switched-mode and resonant-mode power supplies
Electric vehicle battery chargers
AC and DC motor drives
DC-DC converters
Renewable-energy inverters
Power Factor Correction (PFC) circuits
Robotics and servo control

Specifications

Drain-Source Voltage (V)	600	Maximum On-Resistance @ 25 ℃ (Ohm)	0.155
Continuous Drain Current @ 25 ℃ (A)	30	Gate Charge (nC)	56
Input Capacitance, CISS (pF)	2270	Thermal resistance [junction-case] (K/W)	0.25
Configuration	Single	Typical Reverse Recovery Time (ns)	145
Power Dissipation (W)	500	Sample Request	Yes
Check Stock	Yes	Package/Case	TO-220-3