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IXFP20N50P3M +BOM

N-Channel 500 V 8A (Tc) 58W (Tc) Through Hole TO-220-3

Manufacturer:

IXYS
Mfr.Part #:

IXFP20N50P3M
Datasheet:

IXFP20N50P3M Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IXFP20N50P3M

IXFP20N50P3M Information

General Description

In comparison to weaker super junction technologies, the PolarP3™ HiPerFETs showcase a remarkable 12 percent reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg), and an outstanding 20 percent increase in maximum power dissipation (Pd). Not only do these FETs deliver improved performance, but they also achieve lower thermal resistances due to reduced chip thicknesses, ultimately enhancing the total power density of the device

Key Features

Ultra-wideband performance
Low noise figure
Compact design flexibility

Application

High-performance electronics
Advanced power management
Reliable energy systems

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	8 A	Rds On - Drain-Source Resistance	300 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	36 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	58 W
Channel Mode	Enhancement	Tradename	HiPerFET
Series	IXFP20N50	Configuration	Single
Product Type	MOSFET	Factory Pack Quantity	50
Subcategory	MOSFETs	Unit Weight	0.068784 oz
Package/Case	TO-220-3