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These discrete semiconductor modules, labeled IXFN44N50, are designed to operate at 500 volts with a current rating of 44 amperes
IXFN44N50
NRND
Here's a concise introduction to the IXFN44N50: The IXFN44N50 is a high-power discrete semiconductor module from Littelfuse, designed for demanding applications. With a voltage rating of 500V and current handling capability of 44A, it's suitable for DC-DC converters, battery chargers, power supplies, and other high-current applications. The SOT-227B package offers international standard compatibility, low inductance, and fast intrinsic diode switching. The IXFN44N50 features Littelfuse's HDMOS process, providing a low RDS(on) and avalanche-rated performance. Its compact design allows for easy mounting, space savings, and high power density. This module is ideal for applications that require high current handling, low inductance, and fast switching times. Overall, the IXFN44N50 is a reliable and efficient solution for demanding power management applications.
According to the product information, the features of IXFN44N50 are:
These features make it suitable for various applications such as DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC Motor Drives, and Temperature and Lighting Controls.
The package type of IXFN44N50 is SOT-227B.
According to Littelfuse's documentation, the IXFN44N50 is a high-power MOSFET module with an SOT-227B package. The pin count for this device is 4 pins.
The function of each pin is as follows:
This module is designed to handle high currents and provides features such as low RDS(on), fast intrinsic diode, and avalanche-rated performance. It is suitable for various applications including DC-DC converters, battery chargers, and power supplies.
The manufacturer of the IXFN44N50 is Littelfuse, a leading global manufacturer of electronic components, including fuses, switches, and other protection devices.
According to the product information, the application areas of IXFN44N50 are:
Based on the information provided, I can suggest some equivalent products to IXFN44N50:
These products are also high-power MOSFETs with similar specifications and features to IXFN44N50. However, please note that the perfect equivalent product may not be available due to different manufacturers' proprietary designs and technologies.
Drain-Source Voltage (V) | 500 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.12 |
---|---|---|---|
Continuous Drain Current @ 25 ℃ (A) | 44 | Gate Charge (nC) | 270 |
Input Capacitance, CISS (pF) | 8400 | Thermal resistance [junction-case] (K/W) | 0.24 |
Configuration | Single | Power Dissipation (W) | 520 |
Maximum Reverse Recovery (ns) | 250 | Sample Request | No |
Package/Case | SOT-227-4 |
1.Q: What is the operating temperature range for HiPerFET™ MOSFETs?
A: The maximum operating temperature is 150°C.
2.Q: What certifications or standards apply to Littelfuse HiPerFET™ MOSFETs?
A: It complies with ECCN EAR99 and HTS 8541.29.00.95, but lacks specific industry certifications (e.g., UL, AEC-Q) per the provided data.
3.Q: What is the thermal resistance of the HiPerFET™ in miniBLOC package?
A: The maximum power dissipation is 520W, but thermal resistance values (RθJC/RθJA) depend on heatsinking (not specified in datasheet snippet).
4.Q: Does the Littelfuse HiPerFET™ series meet RoHS compliance?
A: Yes, it is RoHS compliant with a "Yes" Rohs Code and lead-free (Pbfree Code: Yes).
5.Q: What is the absolute maximum drain current (IDM) for Littelfuse HiPerFET™ MOSFETs?
A: The pulsed drain current (IDM) can reach up to 176A.
6.Q: What is the package type of Littelfuse HiPerFET™ (e.g., IXFH44N50)?
A: It comes in a SOT-227-4 (miniBLOC) package with a flange-mount design and 4 terminals.
7.Q: What are the typical applications for Littelfuse HiPerFET™ MOSFETs?
A: They are designed for hard-switching and resonant-mode applications, such as industrial power supplies, motor drives, and renewable energy systems.
8.Q: What are the key features of Littelfuse N-Channel HiPerFET™ Standard series?
A: Key features include low gate charge, avalanche ruggedness, fast intrinsic diode, 500V breakdown voltage, 44A continuous drain current, and 0.12Ω max drain-source resistance.
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