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See Technical Specifications

IXFN340N06 +BOM

N-Channel 60 V 340A (Tc) 700W (Tc) Chassis Mount SOT-227B

Manufacturer:

IXYS
Mfr.Part #:

IXFN340N06
Datasheet:

IXFN340N06 Datasheet (PDF)
Product:

Power MOSFET Modules
Technology:

Si
Vgs - Gate-Source Voltage:

- 20 V, + 20 V
Mounting Style:

Chassis Mount
EDA/CAD Models:

Request Free CAD Models for IXFN340N06

IXFN340N06 Information

General Description

The N-Channel HiPerFET™ Standard series, featuring product IXFN340N06, is a trusted choice for power MOSFETs in a range of applications. With low gate charge and excellent ruggedness, this series is capable of meeting the demands of both hard switching and resonant mode applications, while also offering a fast intrinsic diode and availability in standard industrial packages, including isolated types

Key Features

High-Voltage Operation Capability
Excellent Frequency Response
Rapid Temperature Stabilization
Low Package Inductance

Application

Convenient Battery Management

Specifications

Product Category	Discrete Semiconductor Modules	Product	Power MOSFET Modules
Technology	Si	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Mounting Style	Chassis Mount	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	HiPerFET
Configuration	Single	Fall Time	33 ns
Height	9.6 mm	Id - Continuous Drain Current	340 A
Length	38.2 mm	Number of Channels	1 Channel
Pd - Power Dissipation	700 W	Product Type	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance	3 mOhms	Rise Time	95 ns
Factory Pack Quantity	10	Subcategory	Discrete Semiconductor Modules
Tradename	HyperFET	Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	200 ns	Typical Turn-On Delay Time	140 ns
Vds - Drain-Source Breakdown Voltage	60 V	Width	25.07 mm
Unit Weight	1.058219 oz	Package/Case	SOT-227B