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IXFN26N90

In Stock: 7,072

IXFN26N90 SOT-227B MOSFETs ROHS

Manufacturers:
Littelfuse Inc
Mfr.Part#:
IXFN26N90
Package/Case:
SOT-227-4
Product Type:
Single FETs, MOSFETs
RoHS:
Lifecycle:
NRND
EDA/CAD Models:
Request Free CAD Models for IXFN26N90

IXFN26N90 Information

Description

Here's a concise introduction to the IXFN26N90: The IXFN26N90 is a high-performance discrete power module from IXYS, offering a robust solution for demanding applications. With its 900V and 26A rating, it can handle high current and voltage requirements while maintaining low on-resistance (Rds(on)) and low package inductance. The HDMOS process ensures high-quality performance and reliability. This module features fast intrinsic diodes and avalanche ratings, making it suitable for applications that require excellent noise immunity and power output. IXFN26N90 is designed to provide a cost-effective, flexible, and advanced solution for various applications, including improved energy efficiency, enhanced power management, user-friendly operation, and more. Its robust construction, long-lasting durability, and optimal thermal performance make it a reliable choice for demanding electronic designs.

Features

According to the product information, the features of IXFN26N90 are:

International Standard Packages
High Current Handling Capability
Low R (resistance)
DS(on) (driver stage on-resistance)
HDMOS process
Avalanche Rated
Low Package Inductance
Fast intrinsic diode

These features highlight the device's capabilities in terms of power handling, efficiency, and reliability.

Package

The package type of IXFN26N90 is SOT-227-4.

Manufacturer

The manufacturer of the IXFN26N90 is IXYS Corporation, a leading provider of power semiconductor solutions.

Applications

The IXFN26N90 is suitable for various applications that require high power output, low electromagnetic interference (EMI), and quick installation. Some examples include:

Power supplies
Motor drives
Lighting systems
Industrial control systems
Renewable energy systems

Its features make it a reliable choice for applications demanding efficient power conversion, robust construction, and long-lasting durability.

Equivalent

Based on the product information, IXYS IXFN26N90 is a high-power MOSFET module. Equivalent products may include:

STP36NF60
IRF840
NXP UCC28051
ON Semi NCP3024

Please note that equivalent products might have slightly different specifications or packaging.

Specifications

Drain-Source Voltage (V)	900	Maximum On-Resistance @ 25 ℃ (Ohm)	0.3
Continuous Drain Current @ 25 ℃ (A)	26	Gate Charge (nC)	240
Input Capacitance, CISS (pF)	8700	Thermal resistance [junction-case] (K/W)	0.21
Configuration	Single	Power Dissipation (W)	600
Maximum Reverse Recovery (ns)	250	Sample Request	No
Package/Case	SOT-227-4

IXFN26N90 FAQs

1.Q: What is the drain-source on-resistance (RDS(on)) of Littelfuse HiPerFET™?

A: The max RDS(on) is 0.3Ω.

2.Q: Is Littelfuse HiPerFET™ suitable for switching applications?

A: Yes, it’s optimized for switching with low gate charge and enhancement-mode operation.

3.Q: What is the thermal resistance of Littelfuse HiPerFET™ MOSFETs?

A: The datasheet should specify junction-to-case thermal resistance (RθJC), but this parameter isn’t explicitly listed in the provided info.

4.Q: Does Littelfuse HiPerFET™ comply with industry certifications?

A: Yes, it is UL-recognized and complies with RoHS and REACH standards.

5.Q: What are the absolute maximum ratings for Littelfuse HiPerFET™ MOSFETs?

A: Max ratings include 900V drain-source voltage, 26A continuous drain current (104A pulsed), and 150°C operating temperature.

6.Q: What is the maximum power dissipation of Littelfuse HiPerFET™ MOSFETs?

A: The absolute maximum power dissipation is 600W.

7.Q: What is the package type for Littelfuse HiPerFET™ Standard series?

A: It comes in SOT-227-4 (miniBLOC) flange-mount package with 4 terminals and isolated case connection.

8.Q: What is the typical application of Littelfuse HiPerFET™ MOSFETs?

A: They are designed for hard-switching and resonant-mode applications like industrial power supplies, motor drives, and renewable energy systems.

9.Q: What are the key features of Littelfuse N-Channel HiPerFET™ Standard series?

A: Key features include low gate charge, avalanche-rated ruggedness (3000 mJ), fast intrinsic diode, 900V breakdown voltage, 26A drain current, and 0.3Ω max drain-source resistance.

Service Policies and Others

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product Quality Guarantee

We promise to provide 365 days quality assurance service for all our products.

After Sales Service

Returns and exchanges are supported, provided the items remain in their original condition.

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Reference Price（USD）

Request For Price

Quantity

Unit Price

Ext. Price

1000+

$2.888

$2,888.00

500+

$2.938

$1,469.00

200+

$3.039

$607.80

$7.617

$7.62

*The prices above are for reference only.

100,000+ Inventory
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Service Support

Email: [email protected]

Teams: [email protected]

Tel: +852 95804164

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Shipping Information

Shipped From:
HK warehouse
Expected Shipping Date:
to

(HKT)
Expected Quotation Date:
(HKT)
Supplier Lead-Time:
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*Lead times apply to standard orders and are based on business days only. Please contact us for details.

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