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IXFB44N100P Image
IXFB44N100P Image

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IXFB44N100P

In Stock: 2,941

- MOSFETs ROHS

IXFB44N100P Information

Description

The IXFB44N100P is a high-performance N-channel MOSFET designed for various power supply applications, including switch-mode and resonant-mode power supplies. Key features of the IXFB44N100P include:
High Temperature Stability: Ensures reliable performance in demanding conditions.
Gate Turn-off Capability: Reduces conduction losses during switching off.
Compact Design: Minimizes footprint for space-constrained applications.
Silicon-Germanium Process: Offers improved characteristics and higher reliability. The MOSFET is suitable for various power supply tasks such as battery charging, motor control, or maintaining a stable voltage level in a power system. Its robust features ensure long-term reliability even under harsh conditions.

Features

The IXFB44N100P MOSFET features high-performance characteristics suitable for various applications. Key features include:
High Temperature Stability: The device maintains its performance in elevated temperatures.
Gate Turn-Off Capability: Reduces power losses during off-state operation.
Compact Design: Suitable for space-constrained applications.
Silicon-Germanium Process: Enhances device performance and reliability. These features make the IXFB44N100P MOSFET suitable for switch-mode power supplies, DC-DC converters, battery chargers, and other high-performance electronic applications.

Package

The IXFB44N100P MOSFET has two package types: TO-264-3 and TO-264AA.

Pinout

The IXFB44N100P is a high-power trans MOSFET, specifically an N-channel device with a voltage rating of 1KV and current capacity of 44A. As for the pin count and function, the information provided does not specify the exact pin count and functions. TO-264-3 and TO-264AA packages typically have multiple pins, including power supply connections, ground, and possibly control signals. Without access to a detailed datasheet or official documentation, it's impossible to provide an accurate pin count and function for the IXFB44N100P.

Manufacturer

The manufacturer of the IXFB44N100P is IXYS. IXYS is a semiconductor company known for producing power electronic devices, including MOSFETs and IGBTs. With a focus on innovation and technology, IXYS serves various industries requiring high-performance power solutions.

Applications

The IXFB44N100P is a high-performance N-channel MOSFET designed for use in various power supply applications. It is suitable for:
Switching-mode and resonant-mode power supplies.
DC-DC converters.
Battery chargers.
Uninterruptible Power Supplies (UPS).
AC motor drives. The MOSFET's features, such as fast switching speed and low conduction loss, contribute to efficient and reliable operation in these applications.

Equivalent

The equivalent products of IXFB44N100P by IXYS include other high-power MOSFETs like IXPB44N120P or IXPB55N100P, sharing similar specifications for power supplies and motor drives applications.

Specifications

Drain-Source Voltage (V) 1000 Maximum On-Resistance @ 25 ℃ (Ohm) 0.22
Continuous Drain Current @ 25 ℃ (A) 44 Gate Charge (nC) 305
Input Capacitance, CISS (pF) 19000 Thermal resistance [junction-case] (K/W) 0.1
Configuration Single Power Dissipation (W) 1250
Maximum Reverse Recovery (ns) 300 Sample Request Yes
Check Stock Yes Package/Case PLUS-264-3

IXFB44N100P FAQs

1.Q: What related parts complement the IXFB44N100P?

A: Similar parts in Littelfuse’s HiPerFET family include IXFH44N100P (TO-247) or lower-voltage variants like IXFB32N60P.

2.Q: Does the IXFB44N100P comply with industry certifications?

A: Yes, it is RoHS compliant, follows ECCN EAR99, and meets JESD-30/JESD-609 standards.

3.Q: What are the recommended operating conditions for the IXFB44N100P?

A: Operate at -55°C to +150°C, with VGS ≤ ±30V and drain current ≤44A (continuous) or 110A (pulsed).

4.Q: What is the thermal resistance (RthJC) of the IXFB44N100P?

A: The junction-to-case thermal resistance is low (datasheet value required for exact figure), ensuring efficient heat dissipation.

5.Q: What is the maximum power dissipation (Pd) of the IXFB44N100P?

A: The absolute maximum power dissipation is 1250W under specified thermal conditions.

6.Q: What are typical applications for the IXFB44N100P?

A: It is designed for phase-shift bridges, motor control, and UPS systems due to its fast switching and high-voltage handling.

7.Q: What are the key features of the IXFB44N100P?

A: Key features include: 1000V breakdown voltage, 44A drain current, ultra-low RDS(on) (0.22Ω), fast body diode (low trr), avalanche-rated (2000mJ), and enhanced dV/dt capability.

8.Q: What is the pinout configuration of the IXFB44N100P HiPerFET?

A: The IXFB44N100P has a standard 3-terminal TO-264 (R-PSIP-T3) package with pins: Gate (G), Drain (D), and Source (S). The case is connected to the Drain.

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