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See Technical Specifications

IXDN55N120D1 +BOM

N-CH 1200V 100A IGBT Module

Manufacturer:

Littelfuse Inc
Mfr.Part #:

IXDN55N120D1
Datasheet:

IXDN55N120D1 Datasheet (PDF)
Series: Standard
Mount:

Chassis Mount, Screw, Surface Mount
Number Of Pins:

4
Weight:

38.000013 g
EDA/CAD Models:

Request Free CAD Models for IXDN55N120D1

IXDN55N120D1 Information

Description

Here's a concise introduction to the IXDN55N120D1 product: The IXYS IXDN55N120D1 is a high-power, high-voltage Transistor-IGBT (T-IGBT) module designed for demanding applications. With a voltage rating of 1200V and current handling up to 100A, it enables the operation of high-power devices in a compact package. This T-IGBT module features fast switching speeds, low on-state voltage, and a positive temperature coefficient for easy paralleling. The IXDN55N120D1 is RoHS compliant, making it suitable for applications where environmental responsibility is crucial. Its robust construction ensures enhanced ruggedness and reliability. The integrated gate resistor simplifies the gate drive circuitry, reducing design complexity. This versatile module finds applications in areas such as Switched Mode Power Supplies (SMPS), motor controls, high-voltage buffering, inverter circuits, industrial and automotive systems, solid-state lighting, and power factor correction (PFC) and uninterruptible power supplies (UPS).

Features

According to the product description, the features of IXDN55N120D1 are:

Fast switching speed
Low on-state voltage
Positive temperature coefficient for easy paralleling
High input impedance
Enhanced ruggedness and reliability
Integrated gate resistor for simplified gate drive
RoHS compliant

These features make it suitable for various applications, including Switched Mode Power Supplies (SMPS), Motor Controls, High Voltage Buffering, Inverter Circuits, Industrial and Automotive Applications, Solid State Lighting, Power Factor Correction (PFC), and Uninterruptible Power Supplies (UPS).

Package

According to the product information, the package type of IXDN55N120D1 is MODULE.

Manufacturer

The manufacturer of the IXDN55N120D1 is IXYS, a semiconductor company that specializes in designing and manufacturing power semiconductors, including insulated gate bipolar transistors (IGBTs), thyristors, and other power devices.

Specifications

Mount	Chassis Mount, Screw, Surface Mount	Number of Pins	4
Weight	38.000013 g	Collector Emitter Breakdown Voltage	1.2 kV
Collector Emitter Saturation Voltage	2.3 V	Collector Emitter Voltage (VCEO)	1.2 kV
Element Configuration	Single	Input	Standard
Input Capacitance	3.3 nF	Max Collector Current	100 A
Max Operating Temperature	150 °C	Max Power Dissipation	450 W
Min Operating Temperature	-40 °C	NTC Thermistor	No
Turn-Off Delay Time	500 ns	Turn-On Delay Time	100 ns
Height	9.6 mm	Length	38.2 mm
Width	25.07 mm	Package/Case	Module

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

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Returns and exchanges are supported, provided the items remain in their original condition.

Ratings and Reviews

Y**d 11/19/2024

Helped us out on a small order as if it was a large order. Thank you for your help

U**a 03/28/2022

Avaq provided exceptional service, delivering my RTL8305 components within no time. Their professionalism and attention to customer satisfaction are truly commendable. Will definitely purchase from them again! - Matthew C.

B**n 01/23/2022

There were relays in antistatic, the packaging as usual, is received, but everything flew-it came to a whole and unridden. I recommend