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IRLU3410PBF +BOM
N-Channel 100 V 17A (Tc) 79W (Tc) Through Hole IPAK (TO-251AA)
TO251-
Manufacturer:
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Mfr.Part #:
IRLU3410PBF
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Datasheet:
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Series:
HEXFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
100 V
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EDA/CAD Models:
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IRLU3410PBF Information
Description
The Infineon MOSFET IRLU34PBF is a N-channel power transistor designed for high-efficiency power management applications. It features advanced trench technology, low on-resistance (22mΩ), and the ability to handle high current loads. The compact TO-251 package makes it suitable for space-constrained designs. This device is RoHS compliant and lead-free, ensuring environmental sustainability. Its versatility allows it to be used in various applications such as power management, automotive systems, motor control, high-voltage switching, battery-powered devices, industrial equipment, lighting systems, switching regulators, DC-DC converters, audio amplifiers, and more. The IRLU34PBF is an excellent choice for designers seeking a reliable and efficient power transistor solution.
Features
The Infineon MOSFET IRLU3410PBF features:
- N-channel type
- Advanced trench technology
- Low on-resistance of 22m ohms
- Ability to handle high current loads
- Designed for high efficiency power management applications
- Compact TO-251 package
- RoHS compliant
- Lead (Pb)-free
These features make it suitable for various applications such as power management, automotive systems, motor control, and more.
Package
The package type for the Infineon MOSFET IRLU3410PBF is TO-251-3.
Pinout
The Infineon MOSFET IRLU3410PBF has a TO-251 package with 3 pins:
- Drain (D): This is the high-side connection for the MOSFET.
- Source (S): This is the low-side connection for the MOSFET.
- Gate (G): This is the control input for the MOSFET.
- 3 pins: Drain, Source, and Gate
- Function: N-channel power MOSFET for high-efficiency power management applications
The pin count and function of IRLU3410PBF are:
Manufacturer
The manufacturer of the IRLU3410PBF is Infineon Technologies, a German-based semiconductor company that specializes in power management and automotive electronics.
Applications
The Infineon MOSFET IRLU3410PBF is suitable for various applications, including power management, automotive systems, motor control, high-voltage switching, battery-powered devices, industrial equipment, lighting systems, switching regulators, DC-DC converters, and audio amplifiers. Its advanced trench technology and low on-resistance make it an efficient choice for handling high current loads in a compact TO-251 package.
Equivalent
The equivalent products of Infineon's IRLU3410PBF MOSFET transistor include:
- STMicroelectronics' STW24NF60L
- ON Semiconductor's NTHB24N60L
- Fairchild Semiconductor's FPF24N60L
- Vishay Siliconix's SiH24N60AL
These products are similar in terms of their electrical specifications, package type, and application.
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | HEXFET® |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | Rds On (Max) @ Id, Vgs | 105mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
Vgs (Max) | ±16V | Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 79W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IRLU3410 | RHoS | yes |
PBFree | yes | HalogenFree | no |
Package/Case | TO251 |
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IRLU3410PBF Datasheet PDF
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In Stock: 4,231
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.955 | $0.96 |
10+ | $0.807 | $8.07 |
30+ | $0.726 | $21.78 |
75+ | $0.609 | $45.68 |
525+ | $0.569 | $298.72 |
975+ | $0.549 | $535.28 |
The prices above are for reference only.
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