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IRL530NPBF
IRL530NPBF
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IRL530NPBF

In Stock: 5,593

Silicon-based transistor with extremely low input capacitance of 0.12ohm, ideal for RF power amplifiers and switch-mode power supplies

IRL530NPBF Information

Description

The IRL530NPBF is a high-performance N-channel power transistor from Infineon. It's designed for use in demanding applications, such as compact DC-DC converters, electronic ballasts, automotive electronics, and motor control. Key features include low on-state resistance, fast switching speed, enhanced power dissipation capability, and compatibility with various logic devices. The TO-220AB package makes it suitable for through-hole mounting in standard circuits. In summary, the IRL530NPBF is a high-performance transistor designed for demanding applications, offering features like low on-state resistance, fast switching speed, and robust thermal management.

Features

The IRL530NPBF features a powerful N-channel MOSFET designed for high-voltage, high-current applications. Key features include:
Low on-state resistance: Ensures efficient power dissipation and minimized energy loss.
Fast switching speed: Facilitates rapid transitions between conducting and non-conducting states.
Enhanced power capability: Designed to handle high currents, making it suitable for demanding applications like motor control or LED lighting.
Industry-standard TO-220 package: Ensures easy integration into existing electronic circuits. These features make the IRL530NPBF an ideal choice for applications that require high reliability, efficient power management, and fast switching capabilities.

Package

The IRL530NPBF has a TO220 package type.

Pinout

The IRL530NPBF is an N-channel power MOSFET with a TO-220AB package. It has the following features:
Low on-state resistance: Reduces power loss during conduction.
Fast switching speed: Facilitates quick changes between conducting and non-conducting states.
Enhanced dissipation capability: Allows higher power handling without overheating. The IRL530NPBF doesn't specify a pin count, as it's an integrated component without discrete pins. Its functions are primarily controlled through the gate terminal (G) and its connections to a power supply and ground.

Manufacturer

The IRL530NPBF is manufactured by Infineon, a German multinational semiconductor company. Infineon is known for its technology solutions in power electronics, automotive, industrial applications, and more. The company operates globally with a focus on innovation and sustainability.

Applications

The IRL530NPBF is a high-performance N-channel MOSFET suitable for various applications. Its key application areas include:
DC-DC converters in compact electronic systems.
Electronic ballasts in energy-efficient lighting solutions.
Robust automotive electronics, including motor control and power distribution. These versatile MOSFETs can be employed in numerous industrial and consumer applications that demand high efficiency and reliability.

Equivalent

The equivalent product of IRL530NPBF is likely another Infineon N-channel MOSFET with similar specifications, such as IRLB84N or IRL520NPBF. Always refer to the datasheet for accurate equivalents.

IRL530NPBF

Specifications

functionalPacking TUBE addProductInfo Planar Mosfet - TO-220
msl NA halogenFree yes
customerInfo STANDARD fgr FLQ
productClassification COM productStatusInfo discontinued
hfgr P pbFree yes
moistureProtPack NON DRY orderingCode SP001578734
opn IRL530NPBF docuNoCancellation PD_091_22B
completelyPbFree no sapMatnrSali SP001578734
Package/Case TO220

IRL530NPBF FAQs

1.Q: Does the IRL530NPBF-1 comply with industry certifications?

A: No specific certifications (e.g., AEC-Q101) are listed; it’s obsolete (non-automotive) with ECCN EAR99 and HTS 8541.29.00.95.

2.Q: What is the typical gate charge (Q<sub>g</sub>) of the IRL530NPBF-1?

A: The typical total gate charge (Q<sub>g</sub>) is 34nC (max) at V<sub>GS</sub> = 5V, affecting switching speed and drive requirements.

3.Q: What are the recommended operating conditions for the IRL530NPBF-1?

A: Operate within: V<sub>GS</sub> = 10V (for R<sub>DS(on)</sub> spec), T<sub>J</sub> = -55°C to +175°C, and avoid exceeding 63W power dissipation.

4.Q: What is the thermal resistance (R<sub>θJA</sub>) of the IRL530NPBF-1?

A: The thermal resistance junction-to-ambient (R<sub>θJA</sub>) is not specified in the datasheet, but TO-220AB packages typically range ~62°C/W without a heatsink.

5.Q: What are the absolute maximum ratings for the IRL530NPBF-1?

A: Absolute maxima include: V<sub>DS</sub> = 100V, V<sub>GS</sub> = ±16V, I<sub>D</sub> = 17A (continuous) / 60A (pulsed), and P<sub>D</sub> = 63W (at 25°C).

6.Q: What are typical applications for the IRL530NPBF-1?

A: It’s suited for switching applications like DC-DC converters, motor drives, power supplies, and automotive systems (non-automotive grade).

7.Q: What are the key features of the IRL530NPBF-1 MOSFET?

A: Key features include: N-channel logic-level MOSFET, 100V V<sub>DS</sub>, 17A continuous current (60A pulsed), low R<sub>DS(on)</sub> (100mΩ @ 10V V<sub>GS</sub>), and HEXFET technology for high efficiency.

8.Q: What is the pinout configuration of the Infineon IRL530NPBF-1 MOSFET?

A: The IRL530NPBF-1 follows the standard TO-220AB pinout: Pin 1 (Gate), Pin 2 (Drain), Pin 3 (Source). The tab is electrically connected to the Drain.

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