This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRG4PSH71UD +BOM

N-Channel 1200V 99A

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IRG4PSH71UD
Datasheet:

IRG4PSH71UD Datasheet (PDF)
Launch_date:

May 24, 2004
Last_inspection_date:

+90
Supplier_cage_code:

C6489
Schedule_b:

8541290080
EDA/CAD Models:

Request Free CAD Models for IRG4PSH71UD

IRG4PSH71UD Information

General Description

Positioned as a high-speed Insulated Gate Bipolar Transistor (IGBT) within International Rectifier's ultrafast series, the IRG4PSH71UD offers exceptional performance for high-power switching tasks. With a 1200V voltage rating and a 75A current rating, this IGBT delivers the power and reliability needed for a wide range of industrial applications. Its low on-state voltage drop contributes to reduced power loss and enhanced efficiency, making it ideal for high-frequency switching circuits demanding precision. The IRG4PSH71UD's rugged design can withstand high temperatures, ensuring reliable operation in challenging environments. Additionally, its fast switching speed and minimal conduction losses enable efficient performance in high-power scenarios, setting it apart as a standout option for demanding applications

Infineon Technologies Corporation Inventory

Key Features

Ultrafast switching speed optimized for operating frequencies 8 to 40kHz in hard switching
200kHz in resonant mode soft switching
IGBT design provides tighter parameter distribution and higher efficiency
Super-247 package with higher power handling capability compared to same footprint TO-247
Creepage distance increased to 5.35mm
Lead-free
Generation 4 IGBT's offer highest efficiencies available
Maximum power density, twice the power handling of the TO-247, less space than TO-264
IGBTs optimized for specific application conditions
Cost and space saving in designs that require multiple, paralleled IGBTs
HEXFREDTM antiparallel Diode minimizes switching losses and EMI

Infineon Technologies Corporation Original Stock

Application

Solar
Welding

Specifications

place		launch_date	May 24, 2004
last_inspection_date	+90	supplier_cage_code	C6489
htsusa		schedule_b	8541290080
ppap	False	aec
Series	-	IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V	Current - Collector (Ic) (Max)	99 A
Current - Collector Pulsed (Icm)	200 A	Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 70A
Power - Max	350 W	Switching Energy	8.8mJ (on), 9.4mJ (off)
Input Type	Standard	Gate Charge	380 nC
Td (on/off) @ 25°C	46ns/250ns	Test Condition	960V, 70A, 5Ohm, 15V
Reverse Recovery Time (trr)	110 ns	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Package/Case	TO-247

Service Policies and Others

After-Sales & Settlement Related

Payment

Payment Method

TT/Wire Transfer

Paypal

Western Union

Money Gram

For alternative payment channels, please reach out to us at:

[email protected]

Shipping & Packing

Shipping Method

Fedex

UPS

DHL

NTN

Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product

Quality Guarantee

We promise to provide 365 days quality assurance service for all our products.

Ratings and Reviews

J**a 05/05/2020

The resistors look like in description, have 15 om. Was delivered during 39 days. Saller answered for emails.

A**a 04/17/2020

I cannot praise Avaq enough for their exceptional customer service. They ensured a seamless transaction and delivery of the PK632BA components. I will definitely be a returning customer!