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220AB Tube Trans IGBT Chip N-CH 600V 23A 100mW 3-Pin(3+Tab)
TO-220Manufacturer:
Mfr.Part #:
IRG4BC30U
Datasheet:
Series: IRG4BC30U
Pin Count:
3
Released Date:
Apr 5, 2019
Last Modified Date:
Jun 22, 2023 2:40 AM UTC
EDA/CAD Models:
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Here is a concise introduction to the IRG4BC30U: The IRG4BC30U is an Insulated Gate Bipolar Transistor (IGBT) from Infineon, designed for high-speed switching applications in various industries. This device offers high input impedance, low VCE(on) and switching losses, making it suitable for motor control, switch mode power supplies, induction heating, welding equipment, and other high-power applications. With a breakdown voltage of 600V, the IRG4BC30U is capable of handling demanding conditions. Its fast recovery and reverse recovery times minimize energy loss during switching operations. This IGBT is optimized for use in Uninterruptible Power Supplies (UPS), inverters, and motor control systems, making it an ideal component for applications requiring high reliability and efficiency. In summary, the IRG4BC30U is a robust and efficient IGBT designed to excel in high-speed switching applications, particularly in industries such as manufacturing, energy storage, and renewable power generation.
According to the product information, the features of IRG4BC30U are:
These features make the IRG4BC30U suitable for various applications such as motor control, switch mode power supplies, induction heating, welding equipment, uninterruptible power supplies, electronic ballasts, surge protectors, power factor correction, and UPS systems.
According to the product information, the package type of IRG4BC30U is Transistor Outline, Vertical - IRG4BC30U.
The IRG4BC30U is a N-channel power transistor with a TO-247 package, having 3 pins:
It's an Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications in motor control, switch mode power supplies, and other power electronics systems.
The manufacturer of the IRG4BC30U is Infineon. Infineon is a German-based semiconductor manufacturer that specializes in power semiconductors, microcontrollers, and security chips. The company was founded in 1999 as a spin-off from Siemens AG and has since become one of the leading suppliers of power semiconductors for applications such as automotive, industrial, and consumer electronics.
The IRG4BC30U Insulated Gate Bipolar Transistor (IGBT) is designed for high-speed switching applications in various fields, including:
Based on Infineon's product family and specifications, some equivalent products to IRG4BC30U could be:
Please note that these are just suggestions and actual equivalents may vary depending on specific application requirements.
Pin Count | 3 | Released Date | Apr 5, 2019 |
Last Modified Date | Jun 22, 2023 2:40 AM UTC | IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 23 A |
Current - Collector Pulsed (Icm) | 92 A | Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 12A |
Power - Max | 100 W | Switching Energy | 160µJ (on), 200µJ (off) |
Input Type | Standard | Gate Charge | 50 nC |
Td (on/off) @ 25°C | 17ns/78ns | Test Condition | 480V, 12A, 23Ohm, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Package/Case | TO-220 |
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