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IRFP3703PBF +BOM
N-channel 30V MOSFET with a maximum current rating of 210A, packaged in TO-247AC, suitable for rail/tube applications
TO-247-3-
Manufacturer:
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Mfr.Part #:
IRFP3703PBF
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Datasheet:
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Series:
HEXFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
30 V
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EDA/CAD Models:
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Availability: 3847 PCS
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IRFP3703PBF General Description
N-Channel 30 V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC
Key Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High current rating
- Increased ruggedness
- Wide availability from distribution partners
- Industry standard qualification level
- High performance in low frequency applications
- Standard pinout allows for drop in replacement
- High current carrying capability
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | HEXFET® |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 210A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V | Rds On (Max) @ Id, Vgs | 2.8mOhm @ 76A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 209 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 8250 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IRFP3703 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Package/Case | TO-247-3 |
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IRFP3703PBF Datasheet PDF
IRFP3703PBF PDF Preview
In Stock: 3,847
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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