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IRFHS8242TRPBF +BOM
N-Channel 25 V 9.9A (Ta), 21A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2) (DFN2020)
QFN-
Manufacturer:
-
Mfr.Part #:
IRFHS8242TRPBF
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Datasheet:
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Series:
HEXFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
25 V
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EDA/CAD Models:
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Availability: 4988 PCS
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IRFHS8242TRPBF General Description
N-Channel 25 V 9.9A (Ta), 21A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2) (DFN2020)
Key Features
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Industry standard surface-mount power package
- Low R
- DS(on)
- Small outline
- Wide availability from distribution partners
- Industry standard qualification level
- Standard pinout allows for drop in replacement
- High power density
- Compact form factor for space critical applications
Application
- Adapter
- Telecom
- Wireless charger
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | HEXFET® |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25 V | Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 13mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 25µA | Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 653 pF @ 10 V |
FET Feature | - | Power Dissipation (Max) | 2.1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IRFHS8242 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Package/Case | QFN |
Service Policies and Others
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IRFHS8242TRPBF Datasheet PDF
IRFHS8242TRPBF PDF Preview
In Stock: 4,988
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.176 | $1.18 |
10+ | $0.991 | $9.91 |
30+ | $0.893 | $26.79 |
100+ | $0.779 | $77.90 |
500+ | $0.692 | $346.00 |
1000+ | $0.669 | $669.00 |
The prices below are for reference only.